JPS57188843A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS57188843A
JPS57188843A JP56073861A JP7386181A JPS57188843A JP S57188843 A JPS57188843 A JP S57188843A JP 56073861 A JP56073861 A JP 56073861A JP 7386181 A JP7386181 A JP 7386181A JP S57188843 A JPS57188843 A JP S57188843A
Authority
JP
Japan
Prior art keywords
insulating film
semi
threshold voltage
elements
electron level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56073861A
Other languages
Japanese (ja)
Inventor
Shuichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP56073861A priority Critical patent/JPS57188843A/en
Publication of JPS57188843A publication Critical patent/JPS57188843A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Abstract

PURPOSE:To elevate the threshold voltage of a thin semi-insulating film having a high-concentration surface electron level, and to remove defects such as thermal strain by using the semi-insulating film for insulating elements. CONSTITUTION:The semi-insulating film 4 (a discontinuous substance layer in which there are partially Si<++>, Si-O, O2, SiO2, etc.) consisting of a thin layer having the high-concentration surface electron level is formed to the surface of a P type silicon substrate 2, and a gaseous-phase grown oxide film 6 is further shaped. An impurity is introduced from openings 8A, 8B, N<+> layers 10A, 10B functioning as a source and a drain, a thermal oxide film 12 serving as a gate insulating film and electrodes 14A-14C by aluminum films are formed, and a field-effect transistor is shaped. Accordingly, a field section isolating the elements can be brought to sufficiently high threshold voltage.
JP56073861A 1981-05-16 1981-05-16 Semiconductor device and manufacture thereof Pending JPS57188843A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56073861A JPS57188843A (en) 1981-05-16 1981-05-16 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56073861A JPS57188843A (en) 1981-05-16 1981-05-16 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57188843A true JPS57188843A (en) 1982-11-19

Family

ID=13530367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56073861A Pending JPS57188843A (en) 1981-05-16 1981-05-16 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57188843A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100062599A1 (en) * 2008-09-05 2010-03-11 Mitsubishi Electric Corporation Method for manufacturing semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100062599A1 (en) * 2008-09-05 2010-03-11 Mitsubishi Electric Corporation Method for manufacturing semiconductor device
US8377832B2 (en) * 2008-09-05 2013-02-19 Mitsubishi Electric Corporation Method for manufacturing semiconductor device

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