JPS57186374A - Tunnel injection type travelling time effect semiconductor device - Google Patents
Tunnel injection type travelling time effect semiconductor deviceInfo
- Publication number
- JPS57186374A JPS57186374A JP56071573A JP7157381A JPS57186374A JP S57186374 A JPS57186374 A JP S57186374A JP 56071573 A JP56071573 A JP 56071573A JP 7157381 A JP7157381 A JP 7157381A JP S57186374 A JPS57186374 A JP S57186374A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- tunnel injection
- operating
- space
- tunnel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
- H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56071573A JPS57186374A (en) | 1981-05-12 | 1981-05-12 | Tunnel injection type travelling time effect semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56071573A JPS57186374A (en) | 1981-05-12 | 1981-05-12 | Tunnel injection type travelling time effect semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1125599A Division JP2549916B2 (ja) | 1989-05-18 | 1989-05-18 | トンネル注入型走行時間効果三端子半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57186374A true JPS57186374A (en) | 1982-11-16 |
JPH0454394B2 JPH0454394B2 (enrdf_load_stackoverflow) | 1992-08-31 |
Family
ID=13464573
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56071573A Granted JPS57186374A (en) | 1981-05-12 | 1981-05-12 | Tunnel injection type travelling time effect semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57186374A (enrdf_load_stackoverflow) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2569056A1 (fr) * | 1984-08-08 | 1986-02-14 | Japan Res Dev Corp | Transistor a induction statique du type a injection par effet tunnel et circuit integre comprenant un tel transistor |
JPS6134980A (ja) * | 1984-07-26 | 1986-02-19 | Res Dev Corp Of Japan | 半導体集積回路 |
JPS6134979A (ja) * | 1984-07-26 | 1986-02-19 | Res Dev Corp Of Japan | 熱電子放射型静電誘導トランジスタ |
JPS6143479A (ja) * | 1984-08-08 | 1986-03-03 | Res Dev Corp Of Japan | トンネル注入型静電誘導トランジスタ |
JPS6159877A (ja) * | 1984-08-31 | 1986-03-27 | Res Dev Corp Of Japan | 半導体集積回路 |
JPH03209730A (ja) * | 1984-08-08 | 1991-09-12 | Res Dev Corp Of Japan | トンネル注入型静電誘導トランジスタ |
JP2014013893A (ja) * | 2012-06-15 | 2014-01-23 | Imec | トンネル電界効果トランジスタデバイスおよびそのデバイスの製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS502878A (enrdf_load_stackoverflow) * | 1973-05-10 | 1975-01-13 |
-
1981
- 1981-05-12 JP JP56071573A patent/JPS57186374A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS502878A (enrdf_load_stackoverflow) * | 1973-05-10 | 1975-01-13 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6134980A (ja) * | 1984-07-26 | 1986-02-19 | Res Dev Corp Of Japan | 半導体集積回路 |
JPS6134979A (ja) * | 1984-07-26 | 1986-02-19 | Res Dev Corp Of Japan | 熱電子放射型静電誘導トランジスタ |
FR2569056A1 (fr) * | 1984-08-08 | 1986-02-14 | Japan Res Dev Corp | Transistor a induction statique du type a injection par effet tunnel et circuit integre comprenant un tel transistor |
JPS6143479A (ja) * | 1984-08-08 | 1986-03-03 | Res Dev Corp Of Japan | トンネル注入型静電誘導トランジスタ |
JPH03209730A (ja) * | 1984-08-08 | 1991-09-12 | Res Dev Corp Of Japan | トンネル注入型静電誘導トランジスタ |
JPS6159877A (ja) * | 1984-08-31 | 1986-03-27 | Res Dev Corp Of Japan | 半導体集積回路 |
JP2014013893A (ja) * | 2012-06-15 | 2014-01-23 | Imec | トンネル電界効果トランジスタデバイスおよびそのデバイスの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0454394B2 (enrdf_load_stackoverflow) | 1992-08-31 |
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