JPS57184278A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS57184278A
JPS57184278A JP7028581A JP7028581A JPS57184278A JP S57184278 A JPS57184278 A JP S57184278A JP 7028581 A JP7028581 A JP 7028581A JP 7028581 A JP7028581 A JP 7028581A JP S57184278 A JPS57184278 A JP S57184278A
Authority
JP
Japan
Prior art keywords
active layer
layer
type
gaalas
constituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7028581A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0239106B2 (enrdf_load_stackoverflow
Inventor
Kazuhisa Murata
Saburo Yamamoto
Hiroshi Hayashi
Takuo Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP7028581A priority Critical patent/JPS57184278A/ja
Publication of JPS57184278A publication Critical patent/JPS57184278A/ja
Publication of JPH0239106B2 publication Critical patent/JPH0239106B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Semiconductor Lasers (AREA)
JP7028581A 1981-05-08 1981-05-08 Semiconductor laser element Granted JPS57184278A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7028581A JPS57184278A (en) 1981-05-08 1981-05-08 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7028581A JPS57184278A (en) 1981-05-08 1981-05-08 Semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS57184278A true JPS57184278A (en) 1982-11-12
JPH0239106B2 JPH0239106B2 (enrdf_load_stackoverflow) 1990-09-04

Family

ID=13427052

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7028581A Granted JPS57184278A (en) 1981-05-08 1981-05-08 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS57184278A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011114214A (ja) * 2009-11-27 2011-06-09 Mitsubishi Electric Corp 半導体レーザ装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50144393A (enrdf_load_stackoverflow) * 1974-05-10 1975-11-20
JPS5156188A (ja) * 1974-11-13 1976-05-17 Hitachi Ltd Handotaireezasochi
JPS54152878A (en) * 1978-05-23 1979-12-01 Sharp Corp Structure of semiconductor laser element and its manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50144393A (enrdf_load_stackoverflow) * 1974-05-10 1975-11-20
JPS5156188A (ja) * 1974-11-13 1976-05-17 Hitachi Ltd Handotaireezasochi
JPS54152878A (en) * 1978-05-23 1979-12-01 Sharp Corp Structure of semiconductor laser element and its manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011114214A (ja) * 2009-11-27 2011-06-09 Mitsubishi Electric Corp 半導体レーザ装置

Also Published As

Publication number Publication date
JPH0239106B2 (enrdf_load_stackoverflow) 1990-09-04

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