JPS5718373A - Semiconductor photoreceiving element - Google Patents

Semiconductor photoreceiving element

Info

Publication number
JPS5718373A
JPS5718373A JP9302580A JP9302580A JPS5718373A JP S5718373 A JPS5718373 A JP S5718373A JP 9302580 A JP9302580 A JP 9302580A JP 9302580 A JP9302580 A JP 9302580A JP S5718373 A JPS5718373 A JP S5718373A
Authority
JP
Japan
Prior art keywords
layer
inp
type impurity
same conductive
photoreceiving element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9302580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6146076B2 (enrdf_load_stackoverflow
Inventor
Fukunobu Aisaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9302580A priority Critical patent/JPS5718373A/ja
Priority to US06/281,304 priority patent/US4442444A/en
Priority to DE8181303108T priority patent/DE3172668D1/de
Priority to EP81303108A priority patent/EP0043734B1/en
Publication of JPS5718373A publication Critical patent/JPS5718373A/ja
Publication of JPS6146076B2 publication Critical patent/JPS6146076B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

Landscapes

  • Light Receiving Elements (AREA)
JP9302580A 1980-07-08 1980-07-08 Semiconductor photoreceiving element Granted JPS5718373A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP9302580A JPS5718373A (en) 1980-07-08 1980-07-08 Semiconductor photoreceiving element
US06/281,304 US4442444A (en) 1980-07-08 1981-07-08 Avalanche photodiodes
DE8181303108T DE3172668D1 (en) 1980-07-08 1981-07-08 Avalanche photodiodes
EP81303108A EP0043734B1 (en) 1980-07-08 1981-07-08 Avalanche photodiodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9302580A JPS5718373A (en) 1980-07-08 1980-07-08 Semiconductor photoreceiving element

Publications (2)

Publication Number Publication Date
JPS5718373A true JPS5718373A (en) 1982-01-30
JPS6146076B2 JPS6146076B2 (enrdf_load_stackoverflow) 1986-10-11

Family

ID=14070941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9302580A Granted JPS5718373A (en) 1980-07-08 1980-07-08 Semiconductor photoreceiving element

Country Status (1)

Country Link
JP (1) JPS5718373A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254674A (ja) * 1984-05-31 1985-12-16 Fujitsu Ltd 半導体受光装置
JPH02100379A (ja) * 1988-10-07 1990-04-12 Hikari Keisoku Gijutsu Kaihatsu Kk 受光素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254674A (ja) * 1984-05-31 1985-12-16 Fujitsu Ltd 半導体受光装置
JPH02100379A (ja) * 1988-10-07 1990-04-12 Hikari Keisoku Gijutsu Kaihatsu Kk 受光素子

Also Published As

Publication number Publication date
JPS6146076B2 (enrdf_load_stackoverflow) 1986-10-11

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