JPS57181170A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS57181170A
JPS57181170A JP5714282A JP5714282A JPS57181170A JP S57181170 A JPS57181170 A JP S57181170A JP 5714282 A JP5714282 A JP 5714282A JP 5714282 A JP5714282 A JP 5714282A JP S57181170 A JPS57181170 A JP S57181170A
Authority
JP
Japan
Prior art keywords
electrodes
gate electrode
gate
width part
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5714282A
Other languages
Japanese (ja)
Other versions
JPS643074B2 (en
Inventor
Hideaki Kozu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5714282A priority Critical patent/JPS57181170A/en
Publication of JPS57181170A publication Critical patent/JPS57181170A/en
Publication of JPS643074B2 publication Critical patent/JPS643074B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To eliminate the influence by the resistance component of electrodes, by providing a gate electrode on the small width part of the opening on an active layer a gate electrode take-out on the large width part with S, D electrodes placing the gate electrode therebetween in a Schottky barrier FET. CONSTITUTION:An N type active layer 2 is formed on a high specific resistance GaAs substrate 1 with the opening having large and small width parts provided thereon. The gate electrodes 5', 6' of two electrodes 50, 60 contact the active layer across the small width part with electrode take-out parts 5'', 6'' provided on the large width part. A source electrode 3 and drain electrode 4 opposite to each other across the gate electrode are provided. Thus, the gate voltage impressed on the gate electrode take-out part is impressed on the centers of the gate electrodes 5', 6' later to be transmitted to the both ends so that the voltage drop is equal and small for negligence of the influence by the resistance component of electrodes.
JP5714282A 1982-04-05 1982-04-05 Field effect transistor Granted JPS57181170A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5714282A JPS57181170A (en) 1982-04-05 1982-04-05 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5714282A JPS57181170A (en) 1982-04-05 1982-04-05 Field effect transistor

Publications (2)

Publication Number Publication Date
JPS57181170A true JPS57181170A (en) 1982-11-08
JPS643074B2 JPS643074B2 (en) 1989-01-19

Family

ID=13047318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5714282A Granted JPS57181170A (en) 1982-04-05 1982-04-05 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS57181170A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE34244E (en) * 1982-10-15 1993-05-11 Sigma Enterprises, Inc. Multiline slot machine

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5322666U (en) * 1976-08-05 1978-02-25

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5322666U (en) * 1976-08-05 1978-02-25

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE34244E (en) * 1982-10-15 1993-05-11 Sigma Enterprises, Inc. Multiline slot machine

Also Published As

Publication number Publication date
JPS643074B2 (en) 1989-01-19

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