JPS57181169A - Dual gate field effect transistor - Google Patents

Dual gate field effect transistor

Info

Publication number
JPS57181169A
JPS57181169A JP5714182A JP5714182A JPS57181169A JP S57181169 A JPS57181169 A JP S57181169A JP 5714182 A JP5714182 A JP 5714182A JP 5714182 A JP5714182 A JP 5714182A JP S57181169 A JPS57181169 A JP S57181169A
Authority
JP
Japan
Prior art keywords
electrode
parts
gate
take
led out
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5714182A
Other languages
Japanese (ja)
Inventor
Hideaki Kozu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5714182A priority Critical patent/JPS57181169A/en
Publication of JPS57181169A publication Critical patent/JPS57181169A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8124—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with multiple gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To reduce electrode resistance, by providing two electrode parts, electrode take-out parts led out each other in opposite direction from the center of this electrode and S, D electrode take-out parts led out from the both sides of those take-out parts in a dual gate FET. CONSTITUTION:An N type GaAs active layer 2' is formed on a GaAs substrate 1'. Gate electrodes 50, 60 have electrode parts 5'', 6'' to form channel regions and gate electrode take-out parts 5', 6' led out from the center of these gate electrodes. A source electrode 3' is led out from the both sides of the gate take-out part 5' in clearance from the gate electrode part 5'' in an integral and continuous body. A drain electrode 4' is formed in the same way. Thus, the voltage drop of the gate electrode parts on the both ends of the two gate electrode parts 5'', 6'' are equal and small with the resistance of electrode patterns negligible.
JP5714182A 1982-04-05 1982-04-05 Dual gate field effect transistor Pending JPS57181169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5714182A JPS57181169A (en) 1982-04-05 1982-04-05 Dual gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5714182A JPS57181169A (en) 1982-04-05 1982-04-05 Dual gate field effect transistor

Publications (1)

Publication Number Publication Date
JPS57181169A true JPS57181169A (en) 1982-11-08

Family

ID=13047290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5714182A Pending JPS57181169A (en) 1982-04-05 1982-04-05 Dual gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS57181169A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5322666B2 (en) * 1972-03-10 1978-07-10

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5322666B2 (en) * 1972-03-10 1978-07-10

Similar Documents

Publication Publication Date Title
EP0671769A3 (en) Insulated gate field effect transistor
ES8800788A1 (en) MESFET transistor with air layer between the connections of the gate electrode and the substrate and the respective fabrication process.
EP0330142A3 (en) Multi-gate field-effect transistor
JPS57181169A (en) Dual gate field effect transistor
JPS6424467A (en) Field effect transistor
JPS5691477A (en) Semiconductor
JPS6482672A (en) Mos transistor
JPS57141965A (en) Insulated gate type field effect transistor
JPS56116669A (en) Field effect transistor
ES2030742T3 (en) METHOD TO MANUFACTURE A FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED DOOR.
JPS57181170A (en) Field effect transistor
JPS6468968A (en) Thin film transistor
JPS6467970A (en) Thin film transistor
JPS5771184A (en) Manufacture of field effect transistor
JPS55151370A (en) Field effect transistor and fabricating method of the same
JPS53108383A (en) Semiconductor deivce and its manufacture
JPS5660060A (en) Mos semiconductor device
JPS57197870A (en) Schottky barrier gate type field-effect transistor and manufacture thereof
JPS57176774A (en) Field effect transistor and manufacture thereof
JPS5662372A (en) Junction type field effect semiconductor device
JPS57132368A (en) Semiconductor device
JPS57208176A (en) Semiconductor negative resistance element
SE8901420D0 (en) EDGELESS FIELD EFFECT TRANSISTOR AND METHOD OF MAKING THE SAME
GB2003658A (en) Field effect transistor
KR950010096A (en) Semiconductor device and manufacturing method