JPS57178368A - Semiconductor device for breaking current - Google Patents

Semiconductor device for breaking current

Info

Publication number
JPS57178368A
JPS57178368A JP56062599A JP6259981A JPS57178368A JP S57178368 A JPS57178368 A JP S57178368A JP 56062599 A JP56062599 A JP 56062599A JP 6259981 A JP6259981 A JP 6259981A JP S57178368 A JPS57178368 A JP S57178368A
Authority
JP
Japan
Prior art keywords
thyristor
emitter layer
type emitter
type
main
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56062599A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6358377B2 (enrdf_load_stackoverflow
Inventor
Yoshio Terasawa
Susumu Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56062599A priority Critical patent/JPS57178368A/ja
Publication of JPS57178368A publication Critical patent/JPS57178368A/ja
Publication of JPS6358377B2 publication Critical patent/JPS6358377B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Thyristors (AREA)
JP56062599A 1981-04-27 1981-04-27 Semiconductor device for breaking current Granted JPS57178368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56062599A JPS57178368A (en) 1981-04-27 1981-04-27 Semiconductor device for breaking current

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56062599A JPS57178368A (en) 1981-04-27 1981-04-27 Semiconductor device for breaking current

Publications (2)

Publication Number Publication Date
JPS57178368A true JPS57178368A (en) 1982-11-02
JPS6358377B2 JPS6358377B2 (enrdf_load_stackoverflow) 1988-11-15

Family

ID=13204947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56062599A Granted JPS57178368A (en) 1981-04-27 1981-04-27 Semiconductor device for breaking current

Country Status (1)

Country Link
JP (1) JPS57178368A (enrdf_load_stackoverflow)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50112072U (enrdf_load_stackoverflow) * 1974-02-22 1975-09-12
JPS5166783A (ja) * 1974-12-05 1976-06-09 Mitsubishi Electric Corp Handotaisochi
JPS5362484A (en) * 1976-11-16 1978-06-03 Mitsubishi Electric Corp Thyristor
JPS55111168A (en) * 1979-02-21 1980-08-27 Meidensha Electric Mfg Co Ltd Turn-off thyristor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50112072U (enrdf_load_stackoverflow) * 1974-02-22 1975-09-12
JPS5166783A (ja) * 1974-12-05 1976-06-09 Mitsubishi Electric Corp Handotaisochi
JPS5362484A (en) * 1976-11-16 1978-06-03 Mitsubishi Electric Corp Thyristor
JPS55111168A (en) * 1979-02-21 1980-08-27 Meidensha Electric Mfg Co Ltd Turn-off thyristor

Also Published As

Publication number Publication date
JPS6358377B2 (enrdf_load_stackoverflow) 1988-11-15

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