JPS57176749A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS57176749A
JPS57176749A JP56061214A JP6121481A JPS57176749A JP S57176749 A JPS57176749 A JP S57176749A JP 56061214 A JP56061214 A JP 56061214A JP 6121481 A JP6121481 A JP 6121481A JP S57176749 A JPS57176749 A JP S57176749A
Authority
JP
Japan
Prior art keywords
circuit
junction
semiconductor integrated
integrated circuit
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56061214A
Other languages
Japanese (ja)
Inventor
Isao Matsumura
Masaki Shirai
Tomohiro Okubo
Toyohiko Hongo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56061214A priority Critical patent/JPS57176749A/en
Priority to GB8203235A priority patent/GB2097581A/en
Priority to DE19823208021 priority patent/DE3208021A1/en
Publication of JPS57176749A publication Critical patent/JPS57176749A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To prevent the erroneous operation of a circuit operation by covering a P-N junction of at least a part of a circuit element forming an oscillator in a semiconductor integrated circuit device with a light shielding layer. CONSTITUTION:An oscillator having a resistor RD made of P<+> type diffused layer 12, a capacitor C3 formed of a well 18, an oxidized film 15 and a polysilicon layer 19 and MIS type FET Q1-Q4 is formed on a semiconductor substrate 10, and a light shielding film 9 of aluminum or the like is formed to cover the P-N junction of at least a part of the circuit elements. In this manner, the leakage current (leakage resistance) of the P-N junction is prevented due to the incident light, thereby preventing the erroneous operation of the circuit.
JP56061214A 1981-04-24 1981-04-24 Semiconductor integrated circuit device Pending JPS57176749A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56061214A JPS57176749A (en) 1981-04-24 1981-04-24 Semiconductor integrated circuit device
GB8203235A GB2097581A (en) 1981-04-24 1982-02-04 Shielding semiconductor integrated circuit devices from light
DE19823208021 DE3208021A1 (en) 1981-04-24 1982-03-05 INTEGRATED SEMICONDUCTOR CIRCUIT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56061214A JPS57176749A (en) 1981-04-24 1981-04-24 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS57176749A true JPS57176749A (en) 1982-10-30

Family

ID=13164718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56061214A Pending JPS57176749A (en) 1981-04-24 1981-04-24 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57176749A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61102047A (en) * 1984-10-25 1986-05-20 Nec Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61102047A (en) * 1984-10-25 1986-05-20 Nec Corp Semiconductor device

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