JPS57174466A - Dry etching method - Google Patents

Dry etching method

Info

Publication number
JPS57174466A
JPS57174466A JP56059852A JP5985281A JPS57174466A JP S57174466 A JPS57174466 A JP S57174466A JP 56059852 A JP56059852 A JP 56059852A JP 5985281 A JP5985281 A JP 5985281A JP S57174466 A JPS57174466 A JP S57174466A
Authority
JP
Japan
Prior art keywords
etching
plasma
ions
concns
rates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56059852A
Other languages
English (en)
Japanese (ja)
Other versions
JPS629673B2 (Direct
Inventor
Sadayuki Okudaira
Hiroji Saida
Yoshio Sakai
Shigeru Nishimatsu
Keizo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56059852A priority Critical patent/JPS57174466A/ja
Priority to US06/370,147 priority patent/US4436581A/en
Publication of JPS57174466A publication Critical patent/JPS57174466A/ja
Publication of JPS629673B2 publication Critical patent/JPS629673B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/268—
    • H10P50/242—

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP56059852A 1981-04-22 1981-04-22 Dry etching method Granted JPS57174466A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56059852A JPS57174466A (en) 1981-04-22 1981-04-22 Dry etching method
US06/370,147 US4436581A (en) 1981-04-22 1982-04-20 Uniform etching of silicon (doped and undoped) utilizing ions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56059852A JPS57174466A (en) 1981-04-22 1981-04-22 Dry etching method

Publications (2)

Publication Number Publication Date
JPS57174466A true JPS57174466A (en) 1982-10-27
JPS629673B2 JPS629673B2 (Direct) 1987-03-02

Family

ID=13125132

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56059852A Granted JPS57174466A (en) 1981-04-22 1981-04-22 Dry etching method

Country Status (2)

Country Link
US (1) US4436581A (Direct)
JP (1) JPS57174466A (Direct)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066823A (ja) * 1983-09-22 1985-04-17 Semiconductor Energy Lab Co Ltd 半導体エッチング方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4543171A (en) * 1984-03-22 1985-09-24 Rca Corporation Method for eliminating defects in a photodetector
US4992134A (en) * 1989-11-14 1991-02-12 Advanced Micro Devices, Inc. Dopant-independent polysilicon plasma etch
JP3009975B2 (ja) * 1992-11-30 2000-02-14 シャープ株式会社 シリコン薄膜のドライエッチング方法
US6322714B1 (en) 1997-11-12 2001-11-27 Applied Materials Inc. Process for etching silicon-containing material on substrates
US6083803A (en) 1998-02-27 2000-07-04 Micron Technology, Inc. Semiconductor processing methods of forming a conductive projection and methods of increasing alignment tolerances
US6258727B1 (en) * 1998-07-31 2001-07-10 International Business Machines Corporation Method of forming metal lands at the M0 level with a non selective chemistry
US8118946B2 (en) * 2007-11-30 2012-02-21 Wesley George Lau Cleaning process residues from substrate processing chamber components

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1550853A (en) 1975-10-06 1979-08-22 Hitachi Ltd Apparatus and process for plasma treatment
US4183780A (en) 1978-08-21 1980-01-15 International Business Machines Corporation Photon enhanced reactive ion etching
JPS5562734A (en) 1978-11-01 1980-05-12 Toshiba Corp Ion source and ion etching method
US4259145A (en) 1979-06-29 1981-03-31 International Business Machines Corporation Ion source for reactive ion etching
JPS5613480A (en) 1979-07-13 1981-02-09 Hitachi Ltd Dry etching apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066823A (ja) * 1983-09-22 1985-04-17 Semiconductor Energy Lab Co Ltd 半導体エッチング方法

Also Published As

Publication number Publication date
JPS629673B2 (Direct) 1987-03-02
US4436581A (en) 1984-03-13

Similar Documents

Publication Publication Date Title
US4462863A (en) Microwave plasma etching
JPS5593225A (en) Forming method of minute pattern
JPS6435916A (en) Formation of fine pattern
JPS5656636A (en) Processing method of fine pattern
EP0328078A3 (en) Reactive ion etching apparatus
JPS57174466A (en) Dry etching method
IT1213230B (it) Processo planox a becco ridotto per la formazione di componenti elettronici integrati.
JPS57130431A (en) Manufacture of semiconductor device
JPS5587435A (en) Method of producing semiconductor device
JPS53123669A (en) Wafer holding method
JPS5469090A (en) Manufacture of semiconductor device
JPS5642346A (en) Manufacture of semiconductor device
JP3830560B2 (ja) ドライエッチング方法
JPS649619A (en) Manufacture of semiconductor device
JPS53110378A (en) Plasma carrying device
JPS57202734A (en) Method and device for manufacturing of semiconductor
JPS61256725A (ja) ドライエツチング方法
JPS57192265A (en) Method of etching
JPS5747800A (en) Etching method for crystal substrate
JPS5376758A (en) Plasma etching method
JPS563680A (en) Etching method
JPS55104484A (en) Ion etching method
JPS6487790A (en) Dry etching method
JPS5633477A (en) Plasma etching method
JPS6420624A (en) Manufacture of semiconductor device