JPS6487790A - Dry etching method - Google Patents

Dry etching method

Info

Publication number
JPS6487790A
JPS6487790A JP24281587A JP24281587A JPS6487790A JP S6487790 A JPS6487790 A JP S6487790A JP 24281587 A JP24281587 A JP 24281587A JP 24281587 A JP24281587 A JP 24281587A JP S6487790 A JPS6487790 A JP S6487790A
Authority
JP
Japan
Prior art keywords
etching
high
ion
form
rf bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24281587A
Inventor
Hiroyuki Miyashita
Original Assignee
Dainippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Printing Co Ltd filed Critical Dainippon Printing Co Ltd
Priority to JP24281587A priority Critical patent/JPS6487790A/en
Publication of JPS6487790A publication Critical patent/JPS6487790A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE:To form a minute pattern with high precision and at a high rate by dissociating ions and radicals to form a plasma state, and loading an RF bias on a high-m.p. metal to be etched. CONSTITUTION:A microwave 1 and a magnetic field from a magnetic field generator 9 are exerted on a gas to fulfill the electron cyclotron resonance conditions to form a plasma state. An RF bias is impressed on an etching substrate 5 placed in the plasma thus excited by an RF bias source 7 through a working base 6, and loaded on the thin film of the high-m.p. metal. Accordingly, the gaseous CBrF3 introduced into an etching chamber 8 is dissociated into a CFx<+> ion and a Br radical. A negative floating potential is generated at this time on the surface of the etching substrate 5, and the dissociated CFx<+> ion is vertically injected into the thin film. As a result, the direction of the ion is controlled, and hence anisotropic etching is made possible. Consequently, the etching precision can be improved.
JP24281587A 1987-09-29 1987-09-29 Dry etching method Pending JPS6487790A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24281587A JPS6487790A (en) 1987-09-29 1987-09-29 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24281587A JPS6487790A (en) 1987-09-29 1987-09-29 Dry etching method

Publications (1)

Publication Number Publication Date
JPS6487790A true JPS6487790A (en) 1989-03-31

Family

ID=17094701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24281587A Pending JPS6487790A (en) 1987-09-29 1987-09-29 Dry etching method

Country Status (1)

Country Link
JP (1) JPS6487790A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999030360A1 (en) * 1997-12-08 1999-06-17 Applied Materials, Inc. System and method for etching organic anti-reflective coating from a substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999030360A1 (en) * 1997-12-08 1999-06-17 Applied Materials, Inc. System and method for etching organic anti-reflective coating from a substrate
US6296780B1 (en) 1997-12-08 2001-10-02 Applied Materials Inc. System and method for etching organic anti-reflective coating from a substrate

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