JPS57172765A - Electrostatic induction thyristor - Google Patents

Electrostatic induction thyristor

Info

Publication number
JPS57172765A
JPS57172765A JP56057225A JP5722581A JPS57172765A JP S57172765 A JPS57172765 A JP S57172765A JP 56057225 A JP56057225 A JP 56057225A JP 5722581 A JP5722581 A JP 5722581A JP S57172765 A JPS57172765 A JP S57172765A
Authority
JP
Japan
Prior art keywords
layer
type
gate
thyristor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56057225A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0241182B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
Tadahiro Omi
Yoshio Terasawa
Masahiro Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Semiconductor Research Foundation
Original Assignee
Hitachi Ltd
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Semiconductor Research Foundation filed Critical Hitachi Ltd
Priority to JP56057225A priority Critical patent/JPS57172765A/ja
Publication of JPS57172765A publication Critical patent/JPS57172765A/ja
Publication of JPH0241182B2 publication Critical patent/JPH0241182B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/291—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56057225A 1981-04-17 1981-04-17 Electrostatic induction thyristor Granted JPS57172765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56057225A JPS57172765A (en) 1981-04-17 1981-04-17 Electrostatic induction thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56057225A JPS57172765A (en) 1981-04-17 1981-04-17 Electrostatic induction thyristor

Publications (2)

Publication Number Publication Date
JPS57172765A true JPS57172765A (en) 1982-10-23
JPH0241182B2 JPH0241182B2 (enrdf_load_stackoverflow) 1990-09-14

Family

ID=13049581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56057225A Granted JPS57172765A (en) 1981-04-17 1981-04-17 Electrostatic induction thyristor

Country Status (1)

Country Link
JP (1) JPS57172765A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6144463A (ja) * 1984-08-08 1986-03-04 Toyo Electric Mfg Co Ltd サイリスタのエミツタ短絡構造
US4952990A (en) * 1986-06-03 1990-08-28 Bbc Brown Boveri Ag. Gate turn-off power semiconductor component
DE4405682A1 (de) * 1993-02-23 1994-09-01 Nissan Motor Struktur einer Halbleiteranordnung
US5675169A (en) * 1993-02-21 1997-10-07 Nissan Motor Co., Ltd. Motor driving circuit with surge detection/protection and its structure in a semiconductor device
WO2000022679A1 (en) * 1998-10-09 2000-04-20 The Kansai Electric Power Co., Inc. Field-effect semiconductor device
JP2008311574A (ja) * 2007-06-18 2008-12-25 Rohm Co Ltd 半導体装置
US8766317B2 (en) 2007-06-18 2014-07-01 Rohm Co., Ltd. Semiconductor device
CN106024864A (zh) * 2016-06-28 2016-10-12 长安大学 P沟碳化硅静电感应晶闸管及其制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5599774A (en) * 1979-01-26 1980-07-30 Semiconductor Res Found Electrostatic induction type thyristor
JPS55108768A (en) * 1979-02-13 1980-08-21 Semiconductor Res Found Electrostatic induction thyristor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5599774A (en) * 1979-01-26 1980-07-30 Semiconductor Res Found Electrostatic induction type thyristor
JPS55108768A (en) * 1979-02-13 1980-08-21 Semiconductor Res Found Electrostatic induction thyristor

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6144463A (ja) * 1984-08-08 1986-03-04 Toyo Electric Mfg Co Ltd サイリスタのエミツタ短絡構造
US4952990A (en) * 1986-06-03 1990-08-28 Bbc Brown Boveri Ag. Gate turn-off power semiconductor component
US5675169A (en) * 1993-02-21 1997-10-07 Nissan Motor Co., Ltd. Motor driving circuit with surge detection/protection and its structure in a semiconductor device
DE4405682A1 (de) * 1993-02-23 1994-09-01 Nissan Motor Struktur einer Halbleiteranordnung
US5378911A (en) * 1993-02-23 1995-01-03 Nissan Motor Co., Ltd. Structure of semiconductor device
DE4405682C2 (de) * 1993-02-23 1999-01-14 Nissan Motor Struktur einer Halbleiteranordnung
WO2000022679A1 (en) * 1998-10-09 2000-04-20 The Kansai Electric Power Co., Inc. Field-effect semiconductor device
US6600192B1 (en) 1998-10-09 2003-07-29 The Kansai Electric Power Co., Inc. Vertical field-effect semiconductor device with buried gate region
EP1128443A4 (en) * 1998-10-09 2007-08-01 Kansai Electric Power Co Field-effect semiconductor device
JP2008311574A (ja) * 2007-06-18 2008-12-25 Rohm Co Ltd 半導体装置
US8766317B2 (en) 2007-06-18 2014-07-01 Rohm Co., Ltd. Semiconductor device
CN106024864A (zh) * 2016-06-28 2016-10-12 长安大学 P沟碳化硅静电感应晶闸管及其制造方法

Also Published As

Publication number Publication date
JPH0241182B2 (enrdf_load_stackoverflow) 1990-09-14

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