JPS57170571A - Manufacture of mos type semiconductor device - Google Patents

Manufacture of mos type semiconductor device

Info

Publication number
JPS57170571A
JPS57170571A JP56055875A JP5587581A JPS57170571A JP S57170571 A JPS57170571 A JP S57170571A JP 56055875 A JP56055875 A JP 56055875A JP 5587581 A JP5587581 A JP 5587581A JP S57170571 A JPS57170571 A JP S57170571A
Authority
JP
Japan
Prior art keywords
polysilicon
gate
drain
source
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56055875A
Other languages
English (en)
Japanese (ja)
Other versions
JPH024133B2 (enrdf_load_stackoverflow
Inventor
Tatsuo Fuji
Tokujiro Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56055875A priority Critical patent/JPS57170571A/ja
Publication of JPS57170571A publication Critical patent/JPS57170571A/ja
Publication of JPH024133B2 publication Critical patent/JPH024133B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP56055875A 1981-04-14 1981-04-14 Manufacture of mos type semiconductor device Granted JPS57170571A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56055875A JPS57170571A (en) 1981-04-14 1981-04-14 Manufacture of mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56055875A JPS57170571A (en) 1981-04-14 1981-04-14 Manufacture of mos type semiconductor device

Publications (2)

Publication Number Publication Date
JPS57170571A true JPS57170571A (en) 1982-10-20
JPH024133B2 JPH024133B2 (enrdf_load_stackoverflow) 1990-01-26

Family

ID=13011264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56055875A Granted JPS57170571A (en) 1981-04-14 1981-04-14 Manufacture of mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS57170571A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6335290B1 (en) 1998-07-31 2002-01-01 Fujitsu Limited Etching method, thin film transistor matrix substrate, and its manufacture
US6417543B1 (en) 1993-01-18 2002-07-09 Semiconductor Energy Laboratory Co., Ltd. MIS semiconductor device with sloped gate, source, and drain regions
KR100333155B1 (ko) * 1994-09-16 2002-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막반도체장치및그제조방법
US6964890B1 (en) 1992-03-17 2005-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6964890B1 (en) 1992-03-17 2005-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6417543B1 (en) 1993-01-18 2002-07-09 Semiconductor Energy Laboratory Co., Ltd. MIS semiconductor device with sloped gate, source, and drain regions
US6984551B2 (en) 1993-01-18 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. MIS semiconductor device and method of fabricating the same
US7351624B2 (en) 1993-01-18 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. MIS semiconductor device and method of fabricating the same
KR100333155B1 (ko) * 1994-09-16 2002-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막반도체장치및그제조방법
US6335290B1 (en) 1998-07-31 2002-01-01 Fujitsu Limited Etching method, thin film transistor matrix substrate, and its manufacture
KR100349562B1 (ko) * 1998-07-31 2002-08-21 후지쯔 가부시끼가이샤 식각 방법, 박막 트랜지스터 매트릭스 기판 및 그 제조 방법
US6534789B2 (en) 1998-07-31 2003-03-18 Fujitsu Limited Thin film transistor matrix having TFT with LDD regions

Also Published As

Publication number Publication date
JPH024133B2 (enrdf_load_stackoverflow) 1990-01-26

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