JPS57167636A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57167636A
JPS57167636A JP56035023A JP3502381A JPS57167636A JP S57167636 A JPS57167636 A JP S57167636A JP 56035023 A JP56035023 A JP 56035023A JP 3502381 A JP3502381 A JP 3502381A JP S57167636 A JPS57167636 A JP S57167636A
Authority
JP
Japan
Prior art keywords
temperature
substrate
heat treatment
defect
nuclei
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56035023A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6216538B2 (cg-RX-API-DMAC10.html
Inventor
Kazunori Imaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56035023A priority Critical patent/JPS57167636A/ja
Priority to DE8282301212T priority patent/DE3280219D1/de
Priority to EP82301212A priority patent/EP0060676B1/en
Priority to IE559/82A priority patent/IE55966B1/en
Publication of JPS57167636A publication Critical patent/JPS57167636A/ja
Priority to US06/598,544 priority patent/US4597804A/en
Publication of JPS6216538B2 publication Critical patent/JPS6216538B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P95/90—

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)
JP56035023A 1981-03-11 1981-03-11 Manufacture of semiconductor device Granted JPS57167636A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56035023A JPS57167636A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device
DE8282301212T DE3280219D1 (de) 1981-03-11 1982-03-10 Verfahren zur herstellung einer halbleiteranordnung mit ausgluehen eines halbleiterkoerpers.
EP82301212A EP0060676B1 (en) 1981-03-11 1982-03-10 A method for the production of a semiconductor device comprising annealing a silicon wafer
IE559/82A IE55966B1 (en) 1981-03-11 1982-03-11 A method for the production of a semiconductor device comprising annealing a silicon wafer
US06/598,544 US4597804A (en) 1981-03-11 1984-04-12 Methods of forming denuded zone in wafer by intrinsic gettering and forming bipolar transistor therein

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56035023A JPS57167636A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57167636A true JPS57167636A (en) 1982-10-15
JPS6216538B2 JPS6216538B2 (cg-RX-API-DMAC10.html) 1987-04-13

Family

ID=12430454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56035023A Granted JPS57167636A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57167636A (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171826A (ja) * 1982-03-26 1983-10-08 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 酸素析出物粒子の密度及び分布の調整方法
JPH01312840A (ja) * 1988-06-10 1989-12-18 Fujitsu Ltd 半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171826A (ja) * 1982-03-26 1983-10-08 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 酸素析出物粒子の密度及び分布の調整方法
JPH01312840A (ja) * 1988-06-10 1989-12-18 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6216538B2 (cg-RX-API-DMAC10.html) 1987-04-13

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