JPS57166075A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57166075A
JPS57166075A JP56052807A JP5280781A JPS57166075A JP S57166075 A JPS57166075 A JP S57166075A JP 56052807 A JP56052807 A JP 56052807A JP 5280781 A JP5280781 A JP 5280781A JP S57166075 A JPS57166075 A JP S57166075A
Authority
JP
Japan
Prior art keywords
main
electrode
gate
voltage
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56052807A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0355986B2 (enrdf_load_stackoverflow
Inventor
Akio Mimura
Yoshio Terasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56052807A priority Critical patent/JPS57166075A/ja
Publication of JPS57166075A publication Critical patent/JPS57166075A/ja
Publication of JPH0355986B2 publication Critical patent/JPH0355986B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56052807A 1981-04-07 1981-04-07 Semiconductor device Granted JPS57166075A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56052807A JPS57166075A (en) 1981-04-07 1981-04-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56052807A JPS57166075A (en) 1981-04-07 1981-04-07 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57166075A true JPS57166075A (en) 1982-10-13
JPH0355986B2 JPH0355986B2 (enrdf_load_stackoverflow) 1991-08-27

Family

ID=12925110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56052807A Granted JPS57166075A (en) 1981-04-07 1981-04-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57166075A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002063696A1 (en) * 2001-02-06 2002-08-15 The Kansai Electric Power Co., Inc. Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5583262A (en) * 1978-12-20 1980-06-23 Hitachi Ltd Semiconductor device
JPS562667A (en) * 1979-06-20 1981-01-12 Hitachi Ltd Semiconductor device and manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5583262A (en) * 1978-12-20 1980-06-23 Hitachi Ltd Semiconductor device
JPS562667A (en) * 1979-06-20 1981-01-12 Hitachi Ltd Semiconductor device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002063696A1 (en) * 2001-02-06 2002-08-15 The Kansai Electric Power Co., Inc. Semiconductor device

Also Published As

Publication number Publication date
JPH0355986B2 (enrdf_load_stackoverflow) 1991-08-27

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