JPH0355986B2 - - Google Patents
Info
- Publication number
- JPH0355986B2 JPH0355986B2 JP56052807A JP5280781A JPH0355986B2 JP H0355986 B2 JPH0355986 B2 JP H0355986B2 JP 56052807 A JP56052807 A JP 56052807A JP 5280781 A JP5280781 A JP 5280781A JP H0355986 B2 JPH0355986 B2 JP H0355986B2
- Authority
- JP
- Japan
- Prior art keywords
- main electrode
- gate
- region
- electrode region
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56052807A JPS57166075A (en) | 1981-04-07 | 1981-04-07 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56052807A JPS57166075A (en) | 1981-04-07 | 1981-04-07 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57166075A JPS57166075A (en) | 1982-10-13 |
| JPH0355986B2 true JPH0355986B2 (enrdf_load_stackoverflow) | 1991-08-27 |
Family
ID=12925110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56052807A Granted JPS57166075A (en) | 1981-04-07 | 1981-04-07 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57166075A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3916874B2 (ja) * | 2001-02-06 | 2007-05-23 | 関西電力株式会社 | 半導体装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60957B2 (ja) * | 1978-12-20 | 1985-01-11 | 株式会社日立製作所 | 半導体装置の製法 |
| JPS562667A (en) * | 1979-06-20 | 1981-01-12 | Hitachi Ltd | Semiconductor device and manufacture thereof |
-
1981
- 1981-04-07 JP JP56052807A patent/JPS57166075A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57166075A (en) | 1982-10-13 |
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