JPS57162433A - Scanning method for energy beam - Google Patents

Scanning method for energy beam

Info

Publication number
JPS57162433A
JPS57162433A JP4858281A JP4858281A JPS57162433A JP S57162433 A JPS57162433 A JP S57162433A JP 4858281 A JP4858281 A JP 4858281A JP 4858281 A JP4858281 A JP 4858281A JP S57162433 A JPS57162433 A JP S57162433A
Authority
JP
Japan
Prior art keywords
layer
monocrystalline
scan
facet
energy beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4858281A
Other languages
English (en)
Japanese (ja)
Other versions
JPS641046B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4858281A priority Critical patent/JPS57162433A/ja
Publication of JPS57162433A publication Critical patent/JPS57162433A/ja
Publication of JPS641046B2 publication Critical patent/JPS641046B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP4858281A 1981-03-31 1981-03-31 Scanning method for energy beam Granted JPS57162433A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4858281A JPS57162433A (en) 1981-03-31 1981-03-31 Scanning method for energy beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4858281A JPS57162433A (en) 1981-03-31 1981-03-31 Scanning method for energy beam

Publications (2)

Publication Number Publication Date
JPS57162433A true JPS57162433A (en) 1982-10-06
JPS641046B2 JPS641046B2 (enrdf_load_stackoverflow) 1989-01-10

Family

ID=12807385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4858281A Granted JPS57162433A (en) 1981-03-31 1981-03-31 Scanning method for energy beam

Country Status (1)

Country Link
JP (1) JPS57162433A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4784723A (en) * 1982-04-09 1988-11-15 Fujitsu Limited Method for producing a single-crystalline layer
JPH0888196A (ja) * 1994-07-22 1996-04-02 Semiconductor Energy Lab Co Ltd レーザー処理方法
JPH08148428A (ja) * 1994-11-18 1996-06-07 Semiconductor Energy Lab Co Ltd 半導体デバイスのレーザー処理方法
US6753213B2 (en) 1994-07-28 2004-06-22 Semiconductor Energy Laboratory Co., Ltd. Laser processing method
US7160792B2 (en) 1994-07-22 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Laser processing method
JP2007019539A (ja) * 1994-07-22 2007-01-25 Semiconductor Energy Lab Co Ltd レーザー処理方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4784723A (en) * 1982-04-09 1988-11-15 Fujitsu Limited Method for producing a single-crystalline layer
JPH0888196A (ja) * 1994-07-22 1996-04-02 Semiconductor Energy Lab Co Ltd レーザー処理方法
US7160792B2 (en) 1994-07-22 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Laser processing method
JP2007019539A (ja) * 1994-07-22 2007-01-25 Semiconductor Energy Lab Co Ltd レーザー処理方法
US6753213B2 (en) 1994-07-28 2004-06-22 Semiconductor Energy Laboratory Co., Ltd. Laser processing method
JPH08148428A (ja) * 1994-11-18 1996-06-07 Semiconductor Energy Lab Co Ltd 半導体デバイスのレーザー処理方法
US6143661A (en) * 1994-11-18 2000-11-07 Semiconductor Energy Laboratory Co., Ltd. Method of processing semiconductor device with laser

Also Published As

Publication number Publication date
JPS641046B2 (enrdf_load_stackoverflow) 1989-01-10

Similar Documents

Publication Publication Date Title
CN101242927B (zh) 激光加工方法
CN101146642B (zh) 激光加工方法
CN102172799B (zh) 激光加工方法及激光加工装置
DE60205360D1 (de) Dual-laserschneiden von scheiben
KR980003755A (ko) 반도체막의 레이저 어닐 방법
WO2004017382A3 (en) Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity within areas in such regions and edge areas thereof, and a structure of such film regions
JPS6476715A (en) Manufacture of polycrystalline semiconductor thin film
JPS57162433A (en) Scanning method for energy beam
JPS5870536A (ja) レ−ザアニ−ル方法
JPS56126914A (en) Manufacture of semiconductor device
JPS5749225A (en) Single-crystallizing method for non-single crystalline semiconductor layer
JP4289018B2 (ja) 太陽光発電素子の製造方法
US4510015A (en) Method for semiconductor ribbon-to-ribbon conversion
JPS56105641A (en) Semiconductor device
CN1716071A (zh) 结晶方法、薄膜晶体管制造方法、薄膜晶体管及显示装置
JPH0719745B2 (ja) 半導体装置の製造方法
JPS57162434A (en) Annealing method for single crystal wafer
JPS53114669A (en) Cutting method for semiconductor wafer
JPS5653457A (en) Transmitting-receiving method for supersonic wave by laser beam
JPS532074A (en) Scribing method for semiconductor wafer
JPS6482517A (en) Epitaxial crystal growth method
JPS6422072A (en) Manufacture of pin type semiconductor photodetector
JPS55113336A (en) Light-annealing
JPH0352214B2 (enrdf_load_stackoverflow)
JPS52124883A (en) Local connection method of semiconductor crystal substrate and metal wiring