JPS641046B2 - - Google Patents

Info

Publication number
JPS641046B2
JPS641046B2 JP4858281A JP4858281A JPS641046B2 JP S641046 B2 JPS641046 B2 JP S641046B2 JP 4858281 A JP4858281 A JP 4858281A JP 4858281 A JP4858281 A JP 4858281A JP S641046 B2 JPS641046 B2 JP S641046B2
Authority
JP
Japan
Prior art keywords
scanning
wafer
energy
energy beam
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4858281A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57162433A (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4858281A priority Critical patent/JPS57162433A/ja
Publication of JPS57162433A publication Critical patent/JPS57162433A/ja
Publication of JPS641046B2 publication Critical patent/JPS641046B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP4858281A 1981-03-31 1981-03-31 Scanning method for energy beam Granted JPS57162433A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4858281A JPS57162433A (en) 1981-03-31 1981-03-31 Scanning method for energy beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4858281A JPS57162433A (en) 1981-03-31 1981-03-31 Scanning method for energy beam

Publications (2)

Publication Number Publication Date
JPS57162433A JPS57162433A (en) 1982-10-06
JPS641046B2 true JPS641046B2 (enrdf_load_stackoverflow) 1989-01-10

Family

ID=12807385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4858281A Granted JPS57162433A (en) 1981-03-31 1981-03-31 Scanning method for energy beam

Country Status (1)

Country Link
JP (1) JPS57162433A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58176929A (ja) * 1982-04-09 1983-10-17 Fujitsu Ltd 半導体装置の製造方法
JP4667334B2 (ja) * 1994-07-22 2011-04-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3871725B2 (ja) * 1994-07-22 2007-01-24 株式会社半導体エネルギー研究所 レーザー処理方法
US6300176B1 (en) 1994-07-22 2001-10-09 Semiconductor Energy Laboratory Co., Ltd. Laser processing method
TW406861U (en) 1994-07-28 2000-09-21 Semiconductor Energy Lab Laser processing system
JP3535241B2 (ja) * 1994-11-18 2004-06-07 株式会社半導体エネルギー研究所 半導体デバイス及びその作製方法

Also Published As

Publication number Publication date
JPS57162433A (en) 1982-10-06

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