JPH0261145B2 - - Google Patents
Info
- Publication number
- JPH0261145B2 JPH0261145B2 JP56048584A JP4858481A JPH0261145B2 JP H0261145 B2 JPH0261145 B2 JP H0261145B2 JP 56048584 A JP56048584 A JP 56048584A JP 4858481 A JP4858481 A JP 4858481A JP H0261145 B2 JPH0261145 B2 JP H0261145B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- single crystal
- annealing
- axis
- energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4858481A JPS57162434A (en) | 1981-03-31 | 1981-03-31 | Annealing method for single crystal wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4858481A JPS57162434A (en) | 1981-03-31 | 1981-03-31 | Annealing method for single crystal wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57162434A JPS57162434A (en) | 1982-10-06 |
| JPH0261145B2 true JPH0261145B2 (enrdf_load_stackoverflow) | 1990-12-19 |
Family
ID=12807444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4858481A Granted JPS57162434A (en) | 1981-03-31 | 1981-03-31 | Annealing method for single crystal wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57162434A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4927778A (en) * | 1988-08-05 | 1990-05-22 | Eastman Kodak Company | Method of improving yield of LED arrays |
| JP5614739B2 (ja) * | 2010-02-18 | 2014-10-29 | 国立大学法人埼玉大学 | 基板内部加工装置および基板内部加工方法 |
| JP6119712B2 (ja) * | 2014-10-08 | 2017-04-26 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55150238A (en) * | 1979-05-10 | 1980-11-22 | Matsushita Electric Ind Co Ltd | Method of irradiating laser beam |
-
1981
- 1981-03-31 JP JP4858481A patent/JPS57162434A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57162434A (en) | 1982-10-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7071035B2 (en) | Apparatus and method for laser radiation | |
| JP7182456B2 (ja) | レーザ加工方法、及び、半導体部材製造方法 | |
| KR950012909B1 (ko) | 절연층상에 반도체성 물질층을 결정화하는 방법 및 장치 | |
| TW200809940A (en) | Laser working method | |
| JP3054310B2 (ja) | 半導体デバイスのレーザー処理方法 | |
| CN1938827A (zh) | 激光加工方法及半导体芯片 | |
| JP7560055B2 (ja) | レーザ加工方法、半導体部材製造方法及びレーザ加工装置 | |
| JP7330695B2 (ja) | レーザ加工方法、及び、半導体デバイス製造方法 | |
| JPH07307304A (ja) | 半導体デバイスのレーザー処理方法 | |
| JPH0116006B2 (enrdf_load_stackoverflow) | ||
| JPH0261145B2 (enrdf_load_stackoverflow) | ||
| US4719183A (en) | Forming single crystal silicon on insulator by irradiating a laser beam having dual peak energy distribution onto polysilicon on a dielectric substrate having steps | |
| JPS641046B2 (enrdf_load_stackoverflow) | ||
| JP2004289140A (ja) | レーザ照射装置及びレーザ照射方法並びに半導体装置の作製方法。 | |
| JPS6234131B2 (enrdf_load_stackoverflow) | ||
| JPH0420254B2 (enrdf_load_stackoverflow) | ||
| JPS61266387A (ja) | 半導体薄膜のレ−ザ再結晶化法 | |
| JP3483840B2 (ja) | アクティブマトリクス表示装置の作製方法 | |
| JP7246919B2 (ja) | レーザ加工方法、半導体部材製造方法及びレーザ加工装置 | |
| JPS59151421A (ja) | レ−ザアニ−ル装置 | |
| JPH0442358B2 (enrdf_load_stackoverflow) | ||
| JPH01256124A (ja) | Ｍｏｓ型半導体装置の製造方法 | |
| JPS6380521A (ja) | 半導体薄膜結晶層の製造方法 | |
| JPS58222521A (ja) | 半導体膜の形成法 | |
| JPH0337729B2 (enrdf_load_stackoverflow) |