JPS57162434A - Annealing method for single crystal wafer - Google Patents

Annealing method for single crystal wafer

Info

Publication number
JPS57162434A
JPS57162434A JP4858481A JP4858481A JPS57162434A JP S57162434 A JPS57162434 A JP S57162434A JP 4858481 A JP4858481 A JP 4858481A JP 4858481 A JP4858481 A JP 4858481A JP S57162434 A JPS57162434 A JP S57162434A
Authority
JP
Japan
Prior art keywords
wafer
theta
single crystal
axis
cleavage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4858481A
Other languages
Japanese (ja)
Other versions
JPH0261145B2 (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4858481A priority Critical patent/JPS57162434A/en
Publication of JPS57162434A publication Critical patent/JPS57162434A/en
Publication of JPH0261145B2 publication Critical patent/JPH0261145B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To prevent a wafer from cracks by a method wherein energy beam scans for annealing are conducted in directions different from the direction of cleavage in a single crystal wafer. CONSTITUTION:A single crystal wafer 1 of a face direction (100) is fixed upon an X-Y platform and an angle theta is formed by an axis F-F at a right angle to a facet 3 and an axis X or Y. The axes X and Y are in the direction of <100>, a direction of difficult cleavage, when theta=45 deg.. Under such circumstances, the energy beam focus 7 scanning in the direction X or Y does not render the wafer easy to break during handling after treatment. The possibility of breakage is far less than after a beam application along the direction of <110>, a direction of easy cleavage, even when theta is chosen anywhere between 22.5 deg. and 67.5 deg.. By following this method, thermal distortion remaining in the wafer 2 does not lead to breakage, and therefore annealing and single crystallization can be effected can be effected at a fast pace. Accomplishing a same result is a scan conducted in a direction <100> intercepting at an angle theta the axis X or Y at a right angle to or in parallel with the facet 3.
JP4858481A 1981-03-31 1981-03-31 Annealing method for single crystal wafer Granted JPS57162434A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4858481A JPS57162434A (en) 1981-03-31 1981-03-31 Annealing method for single crystal wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4858481A JPS57162434A (en) 1981-03-31 1981-03-31 Annealing method for single crystal wafer

Publications (2)

Publication Number Publication Date
JPS57162434A true JPS57162434A (en) 1982-10-06
JPH0261145B2 JPH0261145B2 (en) 1990-12-19

Family

ID=12807444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4858481A Granted JPS57162434A (en) 1981-03-31 1981-03-31 Annealing method for single crystal wafer

Country Status (1)

Country Link
JP (1) JPS57162434A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4927778A (en) * 1988-08-05 1990-05-22 Eastman Kodak Company Method of improving yield of LED arrays
JP2011167718A (en) * 2010-02-18 2011-09-01 Saitama Univ Apparatus and method for machining inside of substrate
JP2016076650A (en) * 2014-10-08 2016-05-12 トヨタ自動車株式会社 Semiconductor device manufacturing method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150238A (en) * 1979-05-10 1980-11-22 Matsushita Electric Ind Co Ltd Method of irradiating laser beam

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150238A (en) * 1979-05-10 1980-11-22 Matsushita Electric Ind Co Ltd Method of irradiating laser beam

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4927778A (en) * 1988-08-05 1990-05-22 Eastman Kodak Company Method of improving yield of LED arrays
JP2011167718A (en) * 2010-02-18 2011-09-01 Saitama Univ Apparatus and method for machining inside of substrate
JP2016076650A (en) * 2014-10-08 2016-05-12 トヨタ自動車株式会社 Semiconductor device manufacturing method

Also Published As

Publication number Publication date
JPH0261145B2 (en) 1990-12-19

Similar Documents

Publication Publication Date Title
JP3033120B2 (en) Manufacturing method of semiconductor thin film
JP2001023921A (en) Laser treatment apparatus
EP0398190A3 (en) Ion implantation apparatus and method of controlling the same
ES8405445A1 (en) Laser treatment of electrical steel.
JPS56160034A (en) Impurity diffusion
GB1153282A (en) Improvements in or relating to Methods Of and Devices For The Thermal Processing of Material By Means Of Laser Beams
JPS57162434A (en) Annealing method for single crystal wafer
JPS5548926A (en) Preparation of semiconductor device
CN212858217U (en) Laser cutting optical system integrating coaxial vision
EP0828177A3 (en) Acousto-optic element, light deflector, light beam scanning apparatus and image recording apparatus
JPS57162433A (en) Scanning method for energy beam
JPS57141863A (en) Group welding method of lead battery electrode
JPS54161267A (en) Ion injector
JPH01137238A (en) Active matrix array
US4427638A (en) Apparatus for semiconductor ribbon-to-ribbon conversion
JPS62206820A (en) Electron-beam annealing device
GB2133618A (en) Fabricating semiconductor circuits
JPH0775157B2 (en) Electronic beam annealing device
JPS55110035A (en) Jig for heat treating wafer
JPS5750446A (en) Laser scribing method
JPS58115815A (en) Electron beam annealing method
JPS5594786A (en) Electron beam welding method
JPS5512958A (en) Polar coordinate optical system for laser marker
JPS54162453A (en) Semiconductor manufacturing unit
JPS5816747B2 (en) ion implanter