JPH0133937B2 - - Google Patents
Info
- Publication number
- JPH0133937B2 JPH0133937B2 JP15678679A JP15678679A JPH0133937B2 JP H0133937 B2 JPH0133937 B2 JP H0133937B2 JP 15678679 A JP15678679 A JP 15678679A JP 15678679 A JP15678679 A JP 15678679A JP H0133937 B2 JPH0133937 B2 JP H0133937B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- semiconductor wafer
- linear
- length
- light beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 23
- 230000003287 optical effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/34—Methods of heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Computer Hardware Design (AREA)
- Thermal Sciences (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15678679A JPS5680138A (en) | 1979-12-05 | 1979-12-05 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15678679A JPS5680138A (en) | 1979-12-05 | 1979-12-05 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5680138A JPS5680138A (en) | 1981-07-01 |
| JPH0133937B2 true JPH0133937B2 (enrdf_load_stackoverflow) | 1989-07-17 |
Family
ID=15635271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15678679A Granted JPS5680138A (en) | 1979-12-05 | 1979-12-05 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5680138A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56108231A (en) * | 1980-02-01 | 1981-08-27 | Ushio Inc | Annealing method of semiconductor wafer |
| JPS58176929A (ja) * | 1982-04-09 | 1983-10-17 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5424244A (en) | 1992-03-26 | 1995-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Process for laser processing and apparatus for use in the same |
| US6531681B1 (en) * | 2000-03-27 | 2003-03-11 | Ultratech Stepper, Inc. | Apparatus having line source of radiant energy for exposing a substrate |
| US8501638B1 (en) * | 2012-04-27 | 2013-08-06 | Ultratech, Inc. | Laser annealing scanning methods with reduced annealing non-uniformities |
-
1979
- 1979-12-05 JP JP15678679A patent/JPS5680138A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5680138A (en) | 1981-07-01 |
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