JPS5680138A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5680138A
JPS5680138A JP15678679A JP15678679A JPS5680138A JP S5680138 A JPS5680138 A JP S5680138A JP 15678679 A JP15678679 A JP 15678679A JP 15678679 A JP15678679 A JP 15678679A JP S5680138 A JPS5680138 A JP S5680138A
Authority
JP
Japan
Prior art keywords
beams
linear
wafer surface
light
lamp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15678679A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0133937B2 (enrdf_load_stackoverflow
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP15678679A priority Critical patent/JPS5680138A/ja
Publication of JPS5680138A publication Critical patent/JPS5680138A/ja
Publication of JPH0133937B2 publication Critical patent/JPH0133937B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/34—Methods of heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Computer Hardware Design (AREA)
  • Thermal Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
JP15678679A 1979-12-05 1979-12-05 Manufacture of semiconductor device Granted JPS5680138A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15678679A JPS5680138A (en) 1979-12-05 1979-12-05 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15678679A JPS5680138A (en) 1979-12-05 1979-12-05 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5680138A true JPS5680138A (en) 1981-07-01
JPH0133937B2 JPH0133937B2 (enrdf_load_stackoverflow) 1989-07-17

Family

ID=15635271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15678679A Granted JPS5680138A (en) 1979-12-05 1979-12-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5680138A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56108231A (en) * 1980-02-01 1981-08-27 Ushio Inc Annealing method of semiconductor wafer
US4784723A (en) * 1982-04-09 1988-11-15 Fujitsu Limited Method for producing a single-crystalline layer
JP2004512669A (ja) * 2000-03-27 2004-04-22 ウルトラテク，　ステッパー，　インコーポレイテッド 基板を露光するための放射エネルギーの線光源を有する装置
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
JP2013232639A (ja) * 2012-04-27 2013-11-14 Ultratech Inc アニーリングの非均一性を低減したレーザーアニーリング走査方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56108231A (en) * 1980-02-01 1981-08-27 Ushio Inc Annealing method of semiconductor wafer
US4784723A (en) * 1982-04-09 1988-11-15 Fujitsu Limited Method for producing a single-crystalline layer
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US7781271B2 (en) 1992-03-26 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
JP2004512669A (ja) * 2000-03-27 2004-04-22 ウルトラテク，　ステッパー，　インコーポレイテッド 基板を露光するための放射エネルギーの線光源を有する装置
JP2010123994A (ja) * 2000-03-27 2010-06-03 Ultratech Stepper Inc 基板を露光するための放射エネルギーの線光源を有する装置
JP2013232639A (ja) * 2012-04-27 2013-11-14 Ultratech Inc アニーリングの非均一性を低減したレーザーアニーリング走査方法

Also Published As

Publication number Publication date
JPH0133937B2 (enrdf_load_stackoverflow) 1989-07-17

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