JPH0410212B2 - - Google Patents

Info

Publication number

JPH0410212B2

JPH0410212B2 JP14831286A JP14831286A JPH0410212B2 JP H0410212 B2 JPH0410212 B2 JP H0410212B2 JP 14831286 A JP14831286 A JP 14831286A JP 14831286 A JP14831286 A JP 14831286A JP H0410212 B2 JPH0410212 B2 JP H0410212B2

Authority

JP

Japan

Prior art keywords

band

laser beam

strip

shaped

film

Prior art date

1986-06-26

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• 239000010408 film Substances 0.000 claims description 57
• 239000004065 semiconductor Substances 0.000 claims description 19
• 239000010409 thin film Substances 0.000 claims description 12
• 238000000034 method Methods 0.000 claims description 10
• 239000013078 crystal Substances 0.000 claims description 8
• 238000010521 absorption reaction Methods 0.000 claims description 7
• 239000000758 substrate Substances 0.000 claims description 7
• 238000004519 manufacturing process Methods 0.000 claims description 6
• 239000012212 insulator Substances 0.000 claims description 2
• 238000002425 crystallisation Methods 0.000 description 21
• 230000008025 crystallization Effects 0.000 description 21
• 229910052581 Si3N4 Inorganic materials 0.000 description 19
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 19
• 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
• 238000001953 recrystallisation Methods 0.000 description 9
• 238000009826 distribution Methods 0.000 description 7
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
• 229910052710 silicon Inorganic materials 0.000 description 5
• 239000010703 silicon Substances 0.000 description 5
• 238000010586 diagram Methods 0.000 description 4
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
• 239000007788 liquid Substances 0.000 description 3
• 229910052814 silicon oxide Inorganic materials 0.000 description 3
• 238000005224 laser annealing Methods 0.000 description 2
• 235000018734 Sambucus australis Nutrition 0.000 description 1
• 244000180577 Sambucus australis Species 0.000 description 1
• 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
• LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
• 150000001875 compounds Chemical class 0.000 description 1
• 238000007796 conventional method Methods 0.000 description 1
• 230000000694 effects Effects 0.000 description 1
• 238000005530 etching Methods 0.000 description 1
• 238000011156 evaluation Methods 0.000 description 1
• 229910052732 germanium Inorganic materials 0.000 description 1
• GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
• 230000010354 integration Effects 0.000 description 1
• 230000001678 irradiating effect Effects 0.000 description 1
• 238000002955 isolation Methods 0.000 description 1
• 238000002844 melting Methods 0.000 description 1
• 230000008018 melting Effects 0.000 description 1
• 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
• 150000004767 nitrides Chemical class 0.000 description 1
• 230000003071 parasitic effect Effects 0.000 description 1
• 239000007787 solid Substances 0.000 description 1