JPH0152888B2 - - Google Patents

Info

Publication number
JPH0152888B2
JPH0152888B2 JP58097960A JP9796083A JPH0152888B2 JP H0152888 B2 JPH0152888 B2 JP H0152888B2 JP 58097960 A JP58097960 A JP 58097960A JP 9796083 A JP9796083 A JP 9796083A JP H0152888 B2 JPH0152888 B2 JP H0152888B2
Authority
JP
Japan
Prior art keywords
intensity distribution
laser beam
film
insulating film
scanning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58097960A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59224114A (ja
Inventor
Hisaaki Aizaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58097960A priority Critical patent/JPS59224114A/ja
Publication of JPS59224114A publication Critical patent/JPS59224114A/ja
Publication of JPH0152888B2 publication Critical patent/JPH0152888B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP58097960A 1983-06-03 1983-06-03 単結晶半導体薄膜の製造方法 Granted JPS59224114A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58097960A JPS59224114A (ja) 1983-06-03 1983-06-03 単結晶半導体薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58097960A JPS59224114A (ja) 1983-06-03 1983-06-03 単結晶半導体薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS59224114A JPS59224114A (ja) 1984-12-17
JPH0152888B2 true JPH0152888B2 (enrdf_load_stackoverflow) 1989-11-10

Family

ID=14206235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58097960A Granted JPS59224114A (ja) 1983-06-03 1983-06-03 単結晶半導体薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS59224114A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002158184A (ja) * 2000-11-16 2002-05-31 Mitsubishi Electric Corp レーザ熱処理用のレーザ光学系
JP5132083B2 (ja) * 2006-05-17 2013-01-30 株式会社アルバック レーザーアニール装置及びその方法
JP5235073B2 (ja) * 2007-03-05 2013-07-10 株式会社アルバック レーザーアニール装置及びレーザーアニール方法

Also Published As

Publication number Publication date
JPS59224114A (ja) 1984-12-17

Similar Documents

Publication Publication Date Title
EP0047140B1 (en) Method of converting areas of semiconductor material into single crystal areas
EP0235819B1 (en) Process for producing single crystal semiconductor layer
JPS59161014A (ja) 半導体薄膜結晶化方法
JPH0152888B2 (enrdf_load_stackoverflow)
JPS60143624A (ja) 半導体装置の製造方法
KR100250182B1 (ko) 반도체결정의 형성방법 및 반도체소자
JPS6147627A (ja) 半導体装置の製造方法
JPS59184517A (ja) 積層型半導体装置の製造方法
JPS5939791A (ja) 単結晶の製造方法
JPH0410212B2 (enrdf_load_stackoverflow)
JPH0236050B2 (enrdf_load_stackoverflow)
JPS5946021A (ja) 半導体装置の製造方法
JPH0442358B2 (enrdf_load_stackoverflow)
JPS59154016A (ja) 薄膜結晶形成法
JPS60191090A (ja) 半導体装置の製造方法
JP2999212B2 (ja) 溶融再結晶化法による半導体薄膜の製造方法
JPH0523492B2 (enrdf_load_stackoverflow)
JPS62130510A (ja) 半導体基体の製造方法
JP2772824B2 (ja) Ｐｎ接合を単位とする半導体装置
JPH0461491B2 (enrdf_load_stackoverflow)
JPH0449250B2 (enrdf_load_stackoverflow)
JPS59119822A (ja) 半導体装置の製造方法
JPS62130509A (ja) 半導体基体の製造方法
JPH0573324B2 (enrdf_load_stackoverflow)
JPH0368532B2 (enrdf_load_stackoverflow)