JPS57160911A - Manufacture of amorphous silicon film - Google Patents

Manufacture of amorphous silicon film

Info

Publication number
JPS57160911A
JPS57160911A JP4595781A JP4595781A JPS57160911A JP S57160911 A JPS57160911 A JP S57160911A JP 4595781 A JP4595781 A JP 4595781A JP 4595781 A JP4595781 A JP 4595781A JP S57160911 A JPS57160911 A JP S57160911A
Authority
JP
Japan
Prior art keywords
substrate
amorphous
plasma
film
reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4595781A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0134926B2 (enrdf_load_stackoverflow
Inventor
Hajime Ichiyanagi
Nobuhiko Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP4595781A priority Critical patent/JPS57160911A/ja
Publication of JPS57160911A publication Critical patent/JPS57160911A/ja
Publication of JPH0134926B2 publication Critical patent/JPH0134926B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
JP4595781A 1981-03-27 1981-03-27 Manufacture of amorphous silicon film Granted JPS57160911A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4595781A JPS57160911A (en) 1981-03-27 1981-03-27 Manufacture of amorphous silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4595781A JPS57160911A (en) 1981-03-27 1981-03-27 Manufacture of amorphous silicon film

Publications (2)

Publication Number Publication Date
JPS57160911A true JPS57160911A (en) 1982-10-04
JPH0134926B2 JPH0134926B2 (enrdf_load_stackoverflow) 1989-07-21

Family

ID=12733741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4595781A Granted JPS57160911A (en) 1981-03-27 1981-03-27 Manufacture of amorphous silicon film

Country Status (1)

Country Link
JP (1) JPS57160911A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106282963A (zh) * 2016-09-21 2017-01-04 中国科学院上海微系统与信息技术研究所 基于磁场干扰等离子体的非晶硅生长方法及装置
CN108165932A (zh) * 2017-12-29 2018-06-15 深圳市华星光电技术有限公司 蒸镀方法及装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745339A (en) * 1980-09-01 1982-03-15 Canon Inc Production of deposited film
JPS5747710A (en) * 1980-09-02 1982-03-18 Asahi Glass Co Ltd Formation of amorphous film containing silicon

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745339A (en) * 1980-09-01 1982-03-15 Canon Inc Production of deposited film
JPS5747710A (en) * 1980-09-02 1982-03-18 Asahi Glass Co Ltd Formation of amorphous film containing silicon

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106282963A (zh) * 2016-09-21 2017-01-04 中国科学院上海微系统与信息技术研究所 基于磁场干扰等离子体的非晶硅生长方法及装置
CN108165932A (zh) * 2017-12-29 2018-06-15 深圳市华星光电技术有限公司 蒸镀方法及装置

Also Published As

Publication number Publication date
JPH0134926B2 (enrdf_load_stackoverflow) 1989-07-21

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