JPS57159070A - Manufacture of photo electromotive force element - Google Patents
Manufacture of photo electromotive force elementInfo
- Publication number
- JPS57159070A JPS57159070A JP56044939A JP4493981A JPS57159070A JP S57159070 A JPS57159070 A JP S57159070A JP 56044939 A JP56044939 A JP 56044939A JP 4493981 A JP4493981 A JP 4493981A JP S57159070 A JPS57159070 A JP S57159070A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- electromotive force
- force element
- photo electromotive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 10
- 239000000758 substrate Substances 0.000 abstract 3
- 238000006243 chemical reaction Methods 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910000457 iridium oxide Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56044939A JPS57159070A (en) | 1981-03-26 | 1981-03-26 | Manufacture of photo electromotive force element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56044939A JPS57159070A (en) | 1981-03-26 | 1981-03-26 | Manufacture of photo electromotive force element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57159070A true JPS57159070A (en) | 1982-10-01 |
JPS6334632B2 JPS6334632B2 (US20020128544A1-20020912-P00008.png) | 1988-07-11 |
Family
ID=12705447
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56044939A Granted JPS57159070A (en) | 1981-03-26 | 1981-03-26 | Manufacture of photo electromotive force element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57159070A (US20020128544A1-20020912-P00008.png) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6167264A (ja) * | 1984-09-10 | 1986-04-07 | Fuji Xerox Co Ltd | 光電変換素子およびその製造方法 |
JPS6199387A (ja) * | 1984-10-22 | 1986-05-17 | Fuji Xerox Co Ltd | 光電変換素子およびその製造方法 |
JPS62101083A (ja) * | 1985-10-28 | 1987-05-11 | Kanegafuchi Chem Ind Co Ltd | 半導体装置の製造方法 |
JPS62189764A (ja) * | 1986-02-15 | 1987-08-19 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
JPS62189766A (ja) * | 1986-02-15 | 1987-08-19 | Semiconductor Energy Lab Co Ltd | 光電変換装置の作製方法 |
JPS63274184A (ja) * | 1987-05-06 | 1988-11-11 | Hitachi Ltd | 光電変換素子およびその製造方法 |
US7534628B2 (en) | 2006-10-12 | 2009-05-19 | Canon Kabushiki Kaisha | Method for forming semiconductor device and method for forming photovoltaic device |
CN106328722A (zh) * | 2016-09-28 | 2017-01-11 | 西南科技大学 | 一种低串联电阻S‑Si半导体合金膜太阳能电池及其制备方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0370535U (US20020128544A1-20020912-P00008.png) * | 1989-11-14 | 1991-07-16 | ||
JPH0370534U (US20020128544A1-20020912-P00008.png) * | 1989-11-14 | 1991-07-16 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55154781A (en) * | 1979-05-22 | 1980-12-02 | Shunpei Yamazaki | Semiconductor device |
-
1981
- 1981-03-26 JP JP56044939A patent/JPS57159070A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55154781A (en) * | 1979-05-22 | 1980-12-02 | Shunpei Yamazaki | Semiconductor device |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6167264A (ja) * | 1984-09-10 | 1986-04-07 | Fuji Xerox Co Ltd | 光電変換素子およびその製造方法 |
JPS6199387A (ja) * | 1984-10-22 | 1986-05-17 | Fuji Xerox Co Ltd | 光電変換素子およびその製造方法 |
JPS62101083A (ja) * | 1985-10-28 | 1987-05-11 | Kanegafuchi Chem Ind Co Ltd | 半導体装置の製造方法 |
JPH0562830B2 (US20020128544A1-20020912-P00008.png) * | 1985-10-28 | 1993-09-09 | Kanegafuchi Chemical Ind | |
JPS62189764A (ja) * | 1986-02-15 | 1987-08-19 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
JPS62189766A (ja) * | 1986-02-15 | 1987-08-19 | Semiconductor Energy Lab Co Ltd | 光電変換装置の作製方法 |
JPS63274184A (ja) * | 1987-05-06 | 1988-11-11 | Hitachi Ltd | 光電変換素子およびその製造方法 |
US7534628B2 (en) | 2006-10-12 | 2009-05-19 | Canon Kabushiki Kaisha | Method for forming semiconductor device and method for forming photovoltaic device |
CN106328722A (zh) * | 2016-09-28 | 2017-01-11 | 西南科技大学 | 一种低串联电阻S‑Si半导体合金膜太阳能电池及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6334632B2 (US20020128544A1-20020912-P00008.png) | 1988-07-11 |
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