JPS57157587A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS57157587A JPS57157587A JP4290981A JP4290981A JPS57157587A JP S57157587 A JPS57157587 A JP S57157587A JP 4290981 A JP4290981 A JP 4290981A JP 4290981 A JP4290981 A JP 4290981A JP S57157587 A JPS57157587 A JP S57157587A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- oscillation
- mode
- suppressed
- variation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000010355 oscillation Effects 0.000 abstract 6
- 239000013078 crystal Substances 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 230000031700 light absorption Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
- H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4290981A JPS57157587A (en) | 1981-03-24 | 1981-03-24 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4290981A JPS57157587A (en) | 1981-03-24 | 1981-03-24 | Semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57157587A true JPS57157587A (en) | 1982-09-29 |
| JPS6367348B2 JPS6367348B2 (enrdf_load_stackoverflow) | 1988-12-26 |
Family
ID=12649150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4290981A Granted JPS57157587A (en) | 1981-03-24 | 1981-03-24 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57157587A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0317935U (enrdf_load_stackoverflow) * | 1989-07-05 | 1991-02-21 | ||
| JPH09220962A (ja) * | 1996-02-16 | 1997-08-26 | Central Motor Co Ltd | カップホルダ支持構造 |
-
1981
- 1981-03-24 JP JP4290981A patent/JPS57157587A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6367348B2 (enrdf_load_stackoverflow) | 1988-12-26 |
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