JPS57157558A - Complementary mis integrated circuit device - Google Patents

Complementary mis integrated circuit device

Info

Publication number
JPS57157558A
JPS57157558A JP56042213A JP4221381A JPS57157558A JP S57157558 A JPS57157558 A JP S57157558A JP 56042213 A JP56042213 A JP 56042213A JP 4221381 A JP4221381 A JP 4221381A JP S57157558 A JPS57157558 A JP S57157558A
Authority
JP
Japan
Prior art keywords
type
channel
source
mis
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56042213A
Other languages
English (en)
Japanese (ja)
Other versions
JPS649737B2 (enrdf_load_stackoverflow
Inventor
Kensaku Wada
Koichi Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56042213A priority Critical patent/JPS57157558A/ja
Publication of JPS57157558A publication Critical patent/JPS57157558A/ja
Publication of JPS649737B2 publication Critical patent/JPS649737B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56042213A 1981-03-23 1981-03-23 Complementary mis integrated circuit device Granted JPS57157558A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56042213A JPS57157558A (en) 1981-03-23 1981-03-23 Complementary mis integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56042213A JPS57157558A (en) 1981-03-23 1981-03-23 Complementary mis integrated circuit device

Publications (2)

Publication Number Publication Date
JPS57157558A true JPS57157558A (en) 1982-09-29
JPS649737B2 JPS649737B2 (enrdf_load_stackoverflow) 1989-02-20

Family

ID=12629749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56042213A Granted JPS57157558A (en) 1981-03-23 1981-03-23 Complementary mis integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57157558A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925261A (ja) * 1982-08-02 1984-02-09 Hitachi Ltd Ｃｍｏｓ集積回路装置
JPH01155655A (ja) * 1987-12-14 1989-06-19 Hitachi Ltd 半導体集積回路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51146188A (en) * 1975-06-11 1976-12-15 Fujitsu Ltd Diode device
JPS5499584A (en) * 1977-12-20 1979-08-06 Citizen Watch Co Ltd Silicon gate complementary mos integrated circuit
JPS5587391A (en) * 1978-12-22 1980-07-02 Hitachi Ltd Semiconductor memory circuit device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51146188A (en) * 1975-06-11 1976-12-15 Fujitsu Ltd Diode device
JPS5499584A (en) * 1977-12-20 1979-08-06 Citizen Watch Co Ltd Silicon gate complementary mos integrated circuit
JPS5587391A (en) * 1978-12-22 1980-07-02 Hitachi Ltd Semiconductor memory circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925261A (ja) * 1982-08-02 1984-02-09 Hitachi Ltd Ｃｍｏｓ集積回路装置
JPH01155655A (ja) * 1987-12-14 1989-06-19 Hitachi Ltd 半導体集積回路

Also Published As

Publication number Publication date
JPS649737B2 (enrdf_load_stackoverflow) 1989-02-20

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