JPS57154879A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57154879A
JPS57154879A JP57016188A JP1618882A JPS57154879A JP S57154879 A JPS57154879 A JP S57154879A JP 57016188 A JP57016188 A JP 57016188A JP 1618882 A JP1618882 A JP 1618882A JP S57154879 A JPS57154879 A JP S57154879A
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57016188A
Other languages
English (en)
Other versions
JPS6358380B2 (ja
Inventor
Ronarudo Aberii Resuri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS57154879A publication Critical patent/JPS57154879A/ja
Publication of JPS6358380B2 publication Critical patent/JPS6358380B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP57016188A 1981-02-04 1982-02-02 Semiconductor device Granted JPS57154879A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/231,288 US4405933A (en) 1981-02-04 1981-02-04 Protective integrated circuit device utilizing back-to-back zener diodes

Publications (2)

Publication Number Publication Date
JPS57154879A true JPS57154879A (en) 1982-09-24
JPS6358380B2 JPS6358380B2 (ja) 1988-11-15

Family

ID=22868576

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57016188A Granted JPS57154879A (en) 1981-02-04 1982-02-02 Semiconductor device

Country Status (7)

Country Link
US (1) US4405933A (ja)
JP (1) JPS57154879A (ja)
CA (1) CA1170784A (ja)
DE (1) DE3203066C2 (ja)
FR (1) FR2499315A1 (ja)
GB (1) GB2092379B (ja)
IT (1) IT1149532B (ja)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155952A (ja) * 1983-02-25 1984-09-05 Nec Corp 半導体装置
JPS60140878A (ja) * 1983-12-28 1985-07-25 Origin Electric Co Ltd サージ吸収用半導体装置
JPS61225875A (ja) * 1985-03-29 1986-10-07 Origin Electric Co Ltd サ−ジ吸収用半導体装置
JPS637671A (ja) * 1986-06-28 1988-01-13 New Japan Radio Co Ltd 半導体装置
JPS6329983A (ja) * 1986-07-23 1988-02-08 Origin Electric Co Ltd サ−ジ吸収用半導体装置
JPS6320457U (ja) * 1986-07-23 1988-02-10
JPS6370459A (ja) * 1986-09-11 1988-03-30 Origin Electric Co Ltd サ−ジ吸収用半導体装置
JPH04501687A (ja) * 1988-11-21 1992-03-26 トーマス ミュラー 文字を記入していない用紙及び／または文字を記入した用紙及び／またはフォーマット用紙を有しているカーボンコピーセット
JP2007518255A (ja) * 2004-01-02 2007-07-05 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 高エネルギーｅｓｄ構造および方法
JP2013073992A (ja) * 2011-09-27 2013-04-22 Semiconductor Components Industries Llc 半導体装置
JP2013073993A (ja) * 2011-09-27 2013-04-22 Semiconductor Components Industries Llc 半導体装置

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8103376A (nl) * 1981-07-16 1983-02-16 Philips Nv Weergeefinrichting.
JPS58168255A (ja) * 1982-03-30 1983-10-04 Fujitsu Ltd 半導体装置
US4758872A (en) * 1984-10-25 1988-07-19 Nec Corporation Integrated circuit fabricated in a semiconductor substrate
US4651178A (en) * 1985-05-31 1987-03-17 Rca Corporation Dual inverse zener diode with buried junctions
US4631562A (en) * 1985-05-31 1986-12-23 Rca Corporation Zener diode structure
GB2179495B (en) * 1985-08-09 1989-07-26 Plessey Co Plc Protection structures for integrated circuits
IT1186338B (it) * 1985-10-29 1987-11-26 Sgs Microelettronica Spa Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione
JPH0666402B2 (ja) * 1985-12-12 1994-08-24 三菱電機株式会社 半導体集積回路装置の入力保護回路
IT1188398B (it) * 1986-02-18 1988-01-07 Sgs Microelettronica Spa Struttura integrata di protezione da scariche elettrostatische e dispositivo a semiconduttore incorporante la stessa
US4872039A (en) * 1986-04-25 1989-10-03 General Electric Company Buried lateral diode and method for making same
DE3714647C2 (de) * 1987-05-02 1993-10-07 Telefunken Microelectron Integrierte Schaltungsanordnung
FR2624655B1 (fr) * 1987-12-14 1990-05-11 Sgs Thomson Microelectronics Structure de protection d'un acces a un circuit integre
GB8911360D0 (en) * 1989-05-17 1989-07-05 Sarnoff David Res Center Electronic charge protection devices
US5055888A (en) * 1989-06-21 1991-10-08 Texas Instrumenets Incorporated Zener diodes in a linear semiconductor device
DE4137084C2 (de) * 1991-11-12 1994-03-31 Telefunken Microelectron Halbleiteranordnung mit mindestens einem Bipolartransistor und einer Zenerdiode
US5600525A (en) * 1994-08-17 1997-02-04 David Sarnoff Research Center Inc ESD protection circuit for integrated circuit
US5519242A (en) * 1994-08-17 1996-05-21 David Sarnoff Research Center, Inc. Electrostatic discharge protection circuit for a NMOS or lateral NPN transistor
US6204717B1 (en) * 1995-05-22 2001-03-20 Hitachi, Ltd. Semiconductor circuit and semiconductor device for use in equipment such as a power converting apparatus
US5675469A (en) * 1995-07-12 1997-10-07 Motorola, Inc. Integrated circuit with electrostatic discharge (ESD) protection and ESD protection circuit
JPH10189761A (ja) * 1996-12-20 1998-07-21 Fuji Electric Co Ltd 半導体装置
US6054760A (en) * 1996-12-23 2000-04-25 Scb Technologies Inc. Surface-connectable semiconductor bridge elements and devices including the same
KR100482363B1 (ko) * 1997-10-14 2005-08-25 삼성전자주식회사 보호용다이오드를가지는반도체장치및그제조방법
IT1296832B1 (it) * 1997-12-02 1999-08-02 Sgs Thomson Microelectronics Struttura integrata di protezione con dispositivi a soglia di conduzione inversa prestabilita di polarizzazione
JP3955396B2 (ja) * 1998-09-17 2007-08-08 株式会社ルネサステクノロジ 半導体サージ吸収素子
US8184415B2 (en) 2007-02-12 2012-05-22 Nxp B.V. ESD-protection device, a semiconductor device and integrated system in a package comprising such a device
US7888704B2 (en) * 2008-08-15 2011-02-15 System General Corp. Semiconductor device for electrostatic discharge protection
JP6930481B2 (ja) * 2018-04-13 2021-09-01 株式会社デンソー 半導体装置およびその製造方法
US11558018B2 (en) 2020-01-29 2023-01-17 Nxp Usa, Inc. Integrated circuits containing vertically-integrated capacitor-avalanche diode structures

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1073551A (en) * 1964-07-02 1967-06-28 Westinghouse Electric Corp Integrated circuit comprising a diode and method of making the same
US3881179A (en) * 1972-08-23 1975-04-29 Motorola Inc Zener diode structure having three terminals
US3982263A (en) * 1974-05-02 1976-09-21 National Semiconductor Corporation Integrated circuit device comprising vertical channel FET resistor
US4127859A (en) * 1977-02-25 1978-11-28 National Semiconductor Corporation Integrated circuit subsurface zener diode

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0458697B2 (ja) * 1983-02-25 1992-09-18 Nippon Electric Co
JPS59155952A (ja) * 1983-02-25 1984-09-05 Nec Corp 半導体装置
JPS60140878A (ja) * 1983-12-28 1985-07-25 Origin Electric Co Ltd サージ吸収用半導体装置
JPH0516194B2 (ja) * 1983-12-28 1993-03-03 Orijin Denki Kk
JPS61225875A (ja) * 1985-03-29 1986-10-07 Origin Electric Co Ltd サ−ジ吸収用半導体装置
JPS637671A (ja) * 1986-06-28 1988-01-13 New Japan Radio Co Ltd 半導体装置
JPH056672Y2 (ja) * 1986-07-23 1993-02-19
JPS6320457U (ja) * 1986-07-23 1988-02-10
JPS6329983A (ja) * 1986-07-23 1988-02-08 Origin Electric Co Ltd サ−ジ吸収用半導体装置
JPS6370459A (ja) * 1986-09-11 1988-03-30 Origin Electric Co Ltd サ−ジ吸収用半導体装置
JPH04501687A (ja) * 1988-11-21 1992-03-26 トーマス ミュラー 文字を記入していない用紙及び／または文字を記入した用紙及び／またはフォーマット用紙を有しているカーボンコピーセット
JP2007518255A (ja) * 2004-01-02 2007-07-05 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 高エネルギーｅｓｄ構造および方法
JP2013073992A (ja) * 2011-09-27 2013-04-22 Semiconductor Components Industries Llc 半導体装置
JP2013073993A (ja) * 2011-09-27 2013-04-22 Semiconductor Components Industries Llc 半導体装置
US9548292B2 (en) 2011-09-27 2017-01-17 Semiconductor Components Industries, Llc Circuit including a resistive element, a diode, and a switch and a method of using the same

Also Published As

Publication number Publication date
FR2499315B1 (ja) 1984-01-13
FR2499315A1 (fr) 1982-08-06
GB2092379A (en) 1982-08-11
US4405933A (en) 1983-09-20
DE3203066A1 (de) 1982-08-12
CA1170784A (en) 1984-07-10
IT1149532B (it) 1986-12-03
DE3203066C2 (de) 1985-11-14
GB2092379B (en) 1984-10-10
JPS6358380B2 (ja) 1988-11-15
IT8219390A0 (it) 1982-02-01

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