JPS57153479A - Nitride gallium light emitting element - Google Patents

Nitride gallium light emitting element

Info

Publication number
JPS57153479A
JPS57153479A JP3896381A JP3896381A JPS57153479A JP S57153479 A JPS57153479 A JP S57153479A JP 3896381 A JP3896381 A JP 3896381A JP 3896381 A JP3896381 A JP 3896381A JP S57153479 A JPS57153479 A JP S57153479A
Authority
JP
Japan
Prior art keywords
layer
metal
area
solder
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3896381A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6222556B2 (enrdf_load_stackoverflow
Inventor
Yoshimasa Oki
Yukio Toyoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3896381A priority Critical patent/JPS57153479A/ja
Publication of JPS57153479A publication Critical patent/JPS57153479A/ja
Publication of JPS6222556B2 publication Critical patent/JPS6222556B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Led Devices (AREA)
JP3896381A 1981-03-17 1981-03-17 Nitride gallium light emitting element Granted JPS57153479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3896381A JPS57153479A (en) 1981-03-17 1981-03-17 Nitride gallium light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3896381A JPS57153479A (en) 1981-03-17 1981-03-17 Nitride gallium light emitting element

Publications (2)

Publication Number Publication Date
JPS57153479A true JPS57153479A (en) 1982-09-22
JPS6222556B2 JPS6222556B2 (enrdf_load_stackoverflow) 1987-05-19

Family

ID=12539819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3896381A Granted JPS57153479A (en) 1981-03-17 1981-03-17 Nitride gallium light emitting element

Country Status (1)

Country Link
JP (1) JPS57153479A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5408120A (en) * 1992-07-23 1995-04-18 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
JPH08316529A (ja) * 1996-05-16 1996-11-29 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体発光素子
US5733796A (en) * 1990-02-28 1998-03-31 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
KR100622823B1 (ko) 2004-05-07 2006-09-14 엘지전자 주식회사 발광 소자의 제조 방법
EP2262017A3 (en) * 2001-07-23 2017-01-04 Cree, Inc. Flip-Chip bonding of light emitting devices and light emitting devices suitable for Flip-Chip bonding

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6607595B1 (en) 1990-02-28 2003-08-19 Toyoda Gosei Co., Ltd. Method for producing a light-emitting semiconductor device
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US5733796A (en) * 1990-02-28 1998-03-31 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6984536B2 (en) 1990-02-28 2006-01-10 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6472690B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Gallium nitride group compound semiconductor
US6472689B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Light emitting device
US6593599B1 (en) 1990-02-28 2003-07-15 Japan Science And Technology Corporation Light-emitting semiconductor device using gallium nitride group compound
EP1313153A3 (en) * 1992-07-23 2005-05-04 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
US5408120A (en) * 1992-07-23 1995-04-18 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
USRE36747E (en) * 1992-07-23 2000-06-27 Toyoda Gosei Co., Ltd Light-emitting device of gallium nitride compound semiconductor
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US7616672B2 (en) 1994-09-14 2009-11-10 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US8934513B2 (en) 1994-09-14 2015-01-13 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
JPH08316529A (ja) * 1996-05-16 1996-11-29 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体発光素子
EP2262017A3 (en) * 2001-07-23 2017-01-04 Cree, Inc. Flip-Chip bonding of light emitting devices and light emitting devices suitable for Flip-Chip bonding
KR100622823B1 (ko) 2004-05-07 2006-09-14 엘지전자 주식회사 발광 소자의 제조 방법

Also Published As

Publication number Publication date
JPS6222556B2 (enrdf_load_stackoverflow) 1987-05-19

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