JPS57153462A - Manufacture of semiconductor integrated circuit device - Google Patents
Manufacture of semiconductor integrated circuit deviceInfo
- Publication number
- JPS57153462A JPS57153462A JP56041407A JP4140781A JPS57153462A JP S57153462 A JPS57153462 A JP S57153462A JP 56041407 A JP56041407 A JP 56041407A JP 4140781 A JP4140781 A JP 4140781A JP S57153462 A JPS57153462 A JP S57153462A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- film
- resist
- constitution
- thereafter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
Landscapes
- Weting (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56041407A JPS57153462A (en) | 1981-03-18 | 1981-03-18 | Manufacture of semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56041407A JPS57153462A (en) | 1981-03-18 | 1981-03-18 | Manufacture of semiconductor integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57153462A true JPS57153462A (en) | 1982-09-22 |
| JPH0214788B2 JPH0214788B2 (forum.php) | 1990-04-10 |
Family
ID=12607501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56041407A Granted JPS57153462A (en) | 1981-03-18 | 1981-03-18 | Manufacture of semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57153462A (forum.php) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6416645U (forum.php) * | 1987-07-17 | 1989-01-27 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03116588U (forum.php) * | 1990-03-09 | 1991-12-03 |
-
1981
- 1981-03-18 JP JP56041407A patent/JPS57153462A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6416645U (forum.php) * | 1987-07-17 | 1989-01-27 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0214788B2 (forum.php) | 1990-04-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0085916A3 (en) | Method of fabricating field effect transistors | |
| JPS57196573A (en) | Manufacture of mos type semiconductor device | |
| JPS5736842A (en) | Semiconductor integrated circuit device | |
| JPS57192063A (en) | Manufacture of semiconductor device | |
| JPS54161282A (en) | Manufacture of mos semiconductor device | |
| JPS57153462A (en) | Manufacture of semiconductor integrated circuit device | |
| JPS57155777A (en) | Mos transistor | |
| JPS57159066A (en) | Manufacture of semiconductor device | |
| JPS56107552A (en) | Manufacture of semiconductor device | |
| JPS56125875A (en) | Semiconductor integrated circuit device | |
| JPS5583267A (en) | Method of fabricating semiconductor device | |
| JPS54117691A (en) | Production of insulating gate-type semiconductor device | |
| JPS56104470A (en) | Semiconductor device and manufacture thereof | |
| JPS57184248A (en) | Manufacture of semiconductor device | |
| JPS56126957A (en) | Manufacture of semiconductor device | |
| JPS5530867A (en) | Method of making semiconductor device | |
| JPS6457673A (en) | Manufacture of thin film transistor | |
| JPS56135970A (en) | Semiconductor device | |
| JPS5642373A (en) | Manufacture of semiconductor device | |
| JPS645066A (en) | Manufacture of field effect transistor | |
| JPS6467911A (en) | Manufacture of semiconductor device | |
| JPS53144687A (en) | Production of semiconductor device | |
| JPS57173956A (en) | Manufacture of semiconductor device | |
| JPS5670669A (en) | Longitudinal semiconductor device | |
| JPS5683977A (en) | Semiconductor device |