JPS57153462A - Manufacture of semiconductor integrated circuit device - Google Patents

Manufacture of semiconductor integrated circuit device

Info

Publication number
JPS57153462A
JPS57153462A JP56041407A JP4140781A JPS57153462A JP S57153462 A JPS57153462 A JP S57153462A JP 56041407 A JP56041407 A JP 56041407A JP 4140781 A JP4140781 A JP 4140781A JP S57153462 A JPS57153462 A JP S57153462A
Authority
JP
Japan
Prior art keywords
oxide film
film
resist
constitution
thereafter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56041407A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0214788B2 (enrdf_load_stackoverflow
Inventor
Shinichi Sato
Hideo Kotani
Masahiko Denda
Yoshikazu Obayashi
Kazuo Mizuguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56041407A priority Critical patent/JPS57153462A/ja
Publication of JPS57153462A publication Critical patent/JPS57153462A/ja
Publication of JPH0214788B2 publication Critical patent/JPH0214788B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Weting (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP56041407A 1981-03-18 1981-03-18 Manufacture of semiconductor integrated circuit device Granted JPS57153462A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56041407A JPS57153462A (en) 1981-03-18 1981-03-18 Manufacture of semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56041407A JPS57153462A (en) 1981-03-18 1981-03-18 Manufacture of semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS57153462A true JPS57153462A (en) 1982-09-22
JPH0214788B2 JPH0214788B2 (enrdf_load_stackoverflow) 1990-04-10

Family

ID=12607501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56041407A Granted JPS57153462A (en) 1981-03-18 1981-03-18 Manufacture of semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57153462A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6416645U (enrdf_load_stackoverflow) * 1987-07-17 1989-01-27

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03116588U (enrdf_load_stackoverflow) * 1990-03-09 1991-12-03

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6416645U (enrdf_load_stackoverflow) * 1987-07-17 1989-01-27

Also Published As

Publication number Publication date
JPH0214788B2 (enrdf_load_stackoverflow) 1990-04-10

Similar Documents

Publication Publication Date Title
EP0085916A3 (en) Method of fabricating field effect transistors
JPS57196573A (en) Manufacture of mos type semiconductor device
JPS5736842A (en) Semiconductor integrated circuit device
JPS57192063A (en) Manufacture of semiconductor device
JPS54161282A (en) Manufacture of mos semiconductor device
JPS57153462A (en) Manufacture of semiconductor integrated circuit device
JPS57155777A (en) Mos transistor
JPS57159066A (en) Manufacture of semiconductor device
JPS56107552A (en) Manufacture of semiconductor device
JPS56125875A (en) Semiconductor integrated circuit device
JPS5583267A (en) Method of fabricating semiconductor device
JPS54117691A (en) Production of insulating gate-type semiconductor device
JPS56104470A (en) Semiconductor device and manufacture thereof
JPS57184248A (en) Manufacture of semiconductor device
JPS56126957A (en) Manufacture of semiconductor device
JPS5530867A (en) Method of making semiconductor device
JPS6457673A (en) Manufacture of thin film transistor
JPS56135970A (en) Semiconductor device
JPS5642373A (en) Manufacture of semiconductor device
JPS645066A (en) Manufacture of field effect transistor
JPS6467911A (en) Manufacture of semiconductor device
JPS53144687A (en) Production of semiconductor device
JPS57173956A (en) Manufacture of semiconductor device
JPS5670669A (en) Longitudinal semiconductor device
JPS5683977A (en) Semiconductor device