JPS57149749A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS57149749A
JPS57149749A JP56034622A JP3462281A JPS57149749A JP S57149749 A JPS57149749 A JP S57149749A JP 56034622 A JP56034622 A JP 56034622A JP 3462281 A JP3462281 A JP 3462281A JP S57149749 A JPS57149749 A JP S57149749A
Authority
JP
Japan
Prior art keywords
layer
substrate
single crystal
porous
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56034622A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6155249B2 (cg-RX-API-DMAC10.html
Inventor
Tetsushi Sakai
Nobunori Konaka
Hiroki Yamauchi
Michiharu Tanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56034622A priority Critical patent/JPS57149749A/ja
Publication of JPS57149749A publication Critical patent/JPS57149749A/ja
Publication of JPS6155249B2 publication Critical patent/JPS6155249B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/021—
    • H10P90/1906—
    • H10W10/061—
    • H10W10/181—
    • H10W10/20—

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
JP56034622A 1981-03-12 1981-03-12 Semiconductor device and its manufacture Granted JPS57149749A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56034622A JPS57149749A (en) 1981-03-12 1981-03-12 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56034622A JPS57149749A (en) 1981-03-12 1981-03-12 Semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPS57149749A true JPS57149749A (en) 1982-09-16
JPS6155249B2 JPS6155249B2 (cg-RX-API-DMAC10.html) 1986-11-27

Family

ID=12419480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56034622A Granted JPS57149749A (en) 1981-03-12 1981-03-12 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS57149749A (cg-RX-API-DMAC10.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4628591A (en) * 1984-10-31 1986-12-16 Texas Instruments Incorporated Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon
US4927781A (en) * 1989-03-20 1990-05-22 Miller Robert O Method of making a silicon integrated circuit waveguide
US5057022A (en) * 1989-03-20 1991-10-15 Miller Robert O Method of making a silicon integrated circuit waveguide
US5439843A (en) * 1992-01-31 1995-08-08 Canon Kabushiki Kaisha Method for preparing a semiconductor substrate using porous silicon

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4628591A (en) * 1984-10-31 1986-12-16 Texas Instruments Incorporated Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon
US4927781A (en) * 1989-03-20 1990-05-22 Miller Robert O Method of making a silicon integrated circuit waveguide
US5057022A (en) * 1989-03-20 1991-10-15 Miller Robert O Method of making a silicon integrated circuit waveguide
US5439843A (en) * 1992-01-31 1995-08-08 Canon Kabushiki Kaisha Method for preparing a semiconductor substrate using porous silicon

Also Published As

Publication number Publication date
JPS6155249B2 (cg-RX-API-DMAC10.html) 1986-11-27

Similar Documents

Publication Publication Date Title
JPS6027179B2 (ja) 多孔質シリコンの形成方法
JPS57149749A (en) Semiconductor device and its manufacture
GB1356710A (en) Semiconductor resistor
JPS6427229A (en) Etching method for semiconductor substrate
JPS55157241A (en) Manufacture of semiconductor device
JPS54117690A (en) Production of semiconductor device
JPS5568651A (en) Manufacturing method of semiconductor device
JPS55117243A (en) Fabrication of semiconductor device
JPS5459084A (en) Manufacture of semiconductor device
JPS5650573A (en) Mis tunnel diode type mosfet
JPS6450532A (en) Manufacture of silicon thin film
JPS6427245A (en) Manufacture of semiconductor device
JPS5515230A (en) Semiconductor device and its manufacturing method
JPS57128943A (en) Insulation isolated semiconductor integrated device and manufacture thereof
JPS574116A (en) Manufacture of semiconductor substrate
JPS57193062A (en) Manufacture of semiconductor device
JPS5519855A (en) Thin film condenser and manufacture thereof
JPS6481361A (en) Manufacture of tunnel transistor
JPS55162240A (en) Semiconductor device and its manufacture
JPS5638826A (en) Manufacture of semiconductor device
JPS54129881A (en) Manufacture for semiconductor device
JPS5578571A (en) Manufacture of semiconductor device
JPS57167677A (en) Semiconductor device and manufacture thereof
JPS5633844A (en) Semiconductor device and manufacture therefor
JPS55132053A (en) Manufacture of semiconductor device