JPS57145981A - Target for sputtering device - Google Patents

Target for sputtering device

Info

Publication number
JPS57145981A
JPS57145981A JP3020881A JP3020881A JPS57145981A JP S57145981 A JPS57145981 A JP S57145981A JP 3020881 A JP3020881 A JP 3020881A JP 3020881 A JP3020881 A JP 3020881A JP S57145981 A JPS57145981 A JP S57145981A
Authority
JP
Japan
Prior art keywords
target
main body
sputtering process
rear surface
carried out
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3020881A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0215631B2 (enrdf_load_stackoverflow
Inventor
Katsuya Okumura
Masaaki Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3020881A priority Critical patent/JPS57145981A/ja
Publication of JPS57145981A publication Critical patent/JPS57145981A/ja
Publication of JPH0215631B2 publication Critical patent/JPH0215631B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP3020881A 1981-03-03 1981-03-03 Target for sputtering device Granted JPS57145981A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3020881A JPS57145981A (en) 1981-03-03 1981-03-03 Target for sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3020881A JPS57145981A (en) 1981-03-03 1981-03-03 Target for sputtering device

Publications (2)

Publication Number Publication Date
JPS57145981A true JPS57145981A (en) 1982-09-09
JPH0215631B2 JPH0215631B2 (enrdf_load_stackoverflow) 1990-04-12

Family

ID=12297309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3020881A Granted JPS57145981A (en) 1981-03-03 1981-03-03 Target for sputtering device

Country Status (1)

Country Link
JP (1) JPS57145981A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59133369A (ja) * 1983-01-21 1984-07-31 Hitachi Ltd スパツタリング用のタ−ゲツト構造体
JPS59179784A (ja) * 1983-03-31 1984-10-12 Fujitsu Ltd スパツタ装置
JPS60102249U (ja) * 1983-12-19 1985-07-12 日本真空技術株式会社 スパツタリング用タ−ゲツト装置
JPS6318070A (ja) * 1986-04-04 1988-01-25 マテリアルズ　リサ−チ　コ−ポレイシヨン スパッタ陰極一標的アセンブリ
JPH01263270A (ja) * 1988-04-15 1989-10-19 Sharp Corp ターゲットユニット
JPH06108240A (ja) * 1992-09-30 1994-04-19 Shibaura Eng Works Co Ltd スパッタリング源
US5338425A (en) * 1991-06-28 1994-08-16 Mitsubishi Materials Corporation Target units
DE19958857B4 (de) * 1999-06-16 2014-09-25 Applied Materials Gmbh & Co. Kg Sputterkathode
JP2017002355A (ja) * 2015-06-09 2017-01-05 株式会社高純度化学研究所 スパッタリングターゲット組立体

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940682U (enrdf_load_stackoverflow) * 1972-07-13 1974-04-10
JPS5488885A (en) * 1977-12-26 1979-07-14 Matsushita Electric Ind Co Ltd Insulator target for sputtering device
JPS5537879U (enrdf_load_stackoverflow) * 1978-09-04 1980-03-11
JPS5597473A (en) * 1979-01-18 1980-07-24 Murata Mfg Co Ltd Target for sputtering
JPS5597472A (en) * 1979-01-16 1980-07-24 Murata Mfg Co Ltd Target for sputtering

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940682U (enrdf_load_stackoverflow) * 1972-07-13 1974-04-10
JPS5488885A (en) * 1977-12-26 1979-07-14 Matsushita Electric Ind Co Ltd Insulator target for sputtering device
JPS5537879U (enrdf_load_stackoverflow) * 1978-09-04 1980-03-11
JPS5597472A (en) * 1979-01-16 1980-07-24 Murata Mfg Co Ltd Target for sputtering
JPS5597473A (en) * 1979-01-18 1980-07-24 Murata Mfg Co Ltd Target for sputtering

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59133369A (ja) * 1983-01-21 1984-07-31 Hitachi Ltd スパツタリング用のタ−ゲツト構造体
JPS59179784A (ja) * 1983-03-31 1984-10-12 Fujitsu Ltd スパツタ装置
JPS60102249U (ja) * 1983-12-19 1985-07-12 日本真空技術株式会社 スパツタリング用タ−ゲツト装置
JPS6318070A (ja) * 1986-04-04 1988-01-25 マテリアルズ　リサ−チ　コ−ポレイシヨン スパッタ陰極一標的アセンブリ
JPH01263270A (ja) * 1988-04-15 1989-10-19 Sharp Corp ターゲットユニット
US5338425A (en) * 1991-06-28 1994-08-16 Mitsubishi Materials Corporation Target units
JPH06108240A (ja) * 1992-09-30 1994-04-19 Shibaura Eng Works Co Ltd スパッタリング源
DE19958857B4 (de) * 1999-06-16 2014-09-25 Applied Materials Gmbh & Co. Kg Sputterkathode
JP2017002355A (ja) * 2015-06-09 2017-01-05 株式会社高純度化学研究所 スパッタリングターゲット組立体

Also Published As

Publication number Publication date
JPH0215631B2 (enrdf_load_stackoverflow) 1990-04-12

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