JPS57145385A - Method for generating light pulse train - Google Patents

Method for generating light pulse train

Info

Publication number
JPS57145385A
JPS57145385A JP3037881A JP3037881A JPS57145385A JP S57145385 A JPS57145385 A JP S57145385A JP 3037881 A JP3037881 A JP 3037881A JP 3037881 A JP3037881 A JP 3037881A JP S57145385 A JPS57145385 A JP S57145385A
Authority
JP
Japan
Prior art keywords
electrode
type semiconductor
dividing
substrate
confining layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3037881A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6257117B2 (de
Inventor
Hitoshi Kawaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3037881A priority Critical patent/JPS57145385A/ja
Publication of JPS57145385A publication Critical patent/JPS57145385A/ja
Publication of JPS6257117B2 publication Critical patent/JPS6257117B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP3037881A 1981-03-03 1981-03-03 Method for generating light pulse train Granted JPS57145385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3037881A JPS57145385A (en) 1981-03-03 1981-03-03 Method for generating light pulse train

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3037881A JPS57145385A (en) 1981-03-03 1981-03-03 Method for generating light pulse train

Publications (2)

Publication Number Publication Date
JPS57145385A true JPS57145385A (en) 1982-09-08
JPS6257117B2 JPS6257117B2 (de) 1987-11-30

Family

ID=12302212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3037881A Granted JPS57145385A (en) 1981-03-03 1981-03-03 Method for generating light pulse train

Country Status (1)

Country Link
JP (1) JPS57145385A (de)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59165480A (ja) * 1983-03-10 1984-09-18 Nec Corp 半導体発光素子
JPS6032381A (ja) * 1983-08-01 1985-02-19 Matsushita Electric Ind Co Ltd 面発光半導体レ−ザ装置
JPS60186079A (ja) * 1984-03-05 1985-09-21 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置
JPS61271887A (ja) * 1985-05-27 1986-12-02 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ
EP0632550A2 (de) * 1993-06-30 1995-01-04 Fujitsu Limited Modulation von Laserdioden

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59165480A (ja) * 1983-03-10 1984-09-18 Nec Corp 半導体発光素子
JPH0451997B2 (de) * 1983-03-10 1992-08-20 Nippon Electric Co
JPS6032381A (ja) * 1983-08-01 1985-02-19 Matsushita Electric Ind Co Ltd 面発光半導体レ−ザ装置
JPS60186079A (ja) * 1984-03-05 1985-09-21 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置
JPS61271887A (ja) * 1985-05-27 1986-12-02 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ
EP0632550A2 (de) * 1993-06-30 1995-01-04 Fujitsu Limited Modulation von Laserdioden
EP0632550A3 (de) * 1993-06-30 1995-04-26 Fujitsu Ltd Modulation von Laserdioden.
US6044097A (en) * 1993-06-30 2000-03-28 Fujitsu Limited Modulator integrated distributed feed-back laser diode module and device using the same

Also Published As

Publication number Publication date
JPS6257117B2 (de) 1987-11-30

Similar Documents

Publication Publication Date Title
JPS57145385A (en) Method for generating light pulse train
JPS5269285A (en) Semiconductor laser device
JPS56148880A (en) Single longitudinal mode semiconductor laser
JPS5727092A (en) Semiconductor laser device
JPS5763885A (en) Semiconductor laser device
JPS5690586A (en) Semiconductor laser and manufacture thereof
JPS6461084A (en) Semiconductor laser
JPS57145386A (en) Method for generating light pulse train
JPS57145388A (en) Control method for laser light generation
JPS57153485A (en) Laser device
JPS57202793A (en) Laser device
JPS57170583A (en) Semiconductor laser device
JPS56152289A (en) Stripe type semiconductor laser with gate electrode
JPS6482590A (en) Manufacture of semiconductor device
JPS57139986A (en) Manufacure of semiconductor laser
JPS56110288A (en) Semiconductor laser element
JPS54138386A (en) Semiconductor laser device of current narrow type
JPS57169290A (en) Photopulse modulating device
JPS6453487A (en) Semiconductor laser device
JPS5790988A (en) Semiconductor light emitting element
JPS5543822A (en) Semiconductor light emission device
JPS6486585A (en) Semiconductor laser element
JPS5749291A (en) Semiconductor laser device
JPS57211789A (en) Driving method for diode laser
JPS5425686A (en) Semiconductor junction laser