JPS57138181A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57138181A JPS57138181A JP56023860A JP2386081A JPS57138181A JP S57138181 A JPS57138181 A JP S57138181A JP 56023860 A JP56023860 A JP 56023860A JP 2386081 A JP2386081 A JP 2386081A JP S57138181 A JPS57138181 A JP S57138181A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- gate electrodes
- electrodes
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To obtain a multigated construction with no punch-through production, by making gate electrodes close to a drain region wider than other electrodes as for a semiconductor device which provides a plurality of gate electrodes via an insulation film on a semicnductor substrate and a drain region of inverse- conductive type to that of the substrate on the substrate of one side electrode rows. CONSTITUTION:A thick oxide film 12 for inter-element separation is formed around a p type Si substrate 11. The first gate thin oxide film 13 is attached on the substrate 11 surrounded by it. The first layer of a polycrystalline Si film 14 is grown on the whole surface including it. Next, the film 14 is etched selectively. A plurality of Si gate electrodes 141-143 are made for certain intervals apart. These open surface is covered with the second gate oxide film 15. And then, the second layer of a polycrystalline Si film 16 is grown on the whole surface. Si gate electrodes 161-163 are made by etching selectively. At the same time, chosen between an n<+> type source region 17 and a drain region 18, only electrode 163 close to the region 18 is made wider than the other electrodes 161 and 162.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56023860A JPS57138181A (en) | 1981-02-20 | 1981-02-20 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56023860A JPS57138181A (en) | 1981-02-20 | 1981-02-20 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57138181A true JPS57138181A (en) | 1982-08-26 |
| JPH0320907B2 JPH0320907B2 (en) | 1991-03-20 |
Family
ID=12122188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56023860A Granted JPS57138181A (en) | 1981-02-20 | 1981-02-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57138181A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5218140A (en) * | 1975-08-01 | 1977-02-10 | Nec Corp | Ccd delay line |
| JPS5341188A (en) * | 1976-08-25 | 1978-04-14 | Hitachi Ltd | Mis type semiconductor device |
-
1981
- 1981-02-20 JP JP56023860A patent/JPS57138181A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5218140A (en) * | 1975-08-01 | 1977-02-10 | Nec Corp | Ccd delay line |
| JPS5341188A (en) * | 1976-08-25 | 1978-04-14 | Hitachi Ltd | Mis type semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0320907B2 (en) | 1991-03-20 |
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