JPS57138164A - Insulation type semiconductor device - Google Patents
Insulation type semiconductor deviceInfo
- Publication number
- JPS57138164A JPS57138164A JP56023435A JP2343581A JPS57138164A JP S57138164 A JPS57138164 A JP S57138164A JP 56023435 A JP56023435 A JP 56023435A JP 2343581 A JP2343581 A JP 2343581A JP S57138164 A JPS57138164 A JP S57138164A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- metal plate
- metal
- semiconductor device
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
Abstract
PURPOSE:To obtain the insulation type semiconductor device with excellent workability and radiation characteristics for the subject semiconductor device by a method wherein a semiconductor element is installed on the upper surface of the second metal plate having the side face whereon glass is coated, and the second metal plate is sealed in the through hole provided on the first metal plate while the lower surface of the second metal plate is caved in. CONSTITUTION:This semiconductor device consists of a plurality of terminal leads 28, to be used to connect each electrode of the metal plate 27 and an element 23 which will be used to adhere a semiconductor element 23 to the center part of a metal stem 22, a substrate 27 and a metal plate 29 to be used to weld a metal cap surrounding the lead 28. In this constitution, a substrate 29 is formed with the metal member of iron base having excellent adhesive strength on a cap and a glass material, and at the center part of which a plurality of holes 33, in which a throug hole 23 wherein a metal substrate 27 to be used to adhere the element 23 will be fitted, are provided. The stem 22 is constituted as above, the element 23 is adhered to the substrate 27 made of copper and the like using solder 24, glass is coated on the side face of the substrate 27, and the substrate 27 is fitted in the through hole 32 while its lower surface is caved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56023435A JPS57138164A (en) | 1981-02-19 | 1981-02-19 | Insulation type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56023435A JPS57138164A (en) | 1981-02-19 | 1981-02-19 | Insulation type semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57138164A true JPS57138164A (en) | 1982-08-26 |
JPS639663B2 JPS639663B2 (en) | 1988-03-01 |
Family
ID=12110419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56023435A Granted JPS57138164A (en) | 1981-02-19 | 1981-02-19 | Insulation type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57138164A (en) |
-
1981
- 1981-02-19 JP JP56023435A patent/JPS57138164A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS639663B2 (en) | 1988-03-01 |
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