JPS57136385A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS57136385A
JPS57136385A JP2165781A JP2165781A JPS57136385A JP S57136385 A JPS57136385 A JP S57136385A JP 2165781 A JP2165781 A JP 2165781A JP 2165781 A JP2165781 A JP 2165781A JP S57136385 A JPS57136385 A JP S57136385A
Authority
JP
Japan
Prior art keywords
layer
type
substrate
polycrystalline
mesa stripe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2165781A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0370391B2 (enrdf_load_stackoverflow
Inventor
Keiichi Yoshitoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2165781A priority Critical patent/JPS57136385A/ja
Publication of JPS57136385A publication Critical patent/JPS57136385A/ja
Publication of JPH0370391B2 publication Critical patent/JPH0370391B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth

Landscapes

  • Semiconductor Lasers (AREA)
JP2165781A 1981-02-16 1981-02-16 Manufacture of semiconductor laser Granted JPS57136385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2165781A JPS57136385A (en) 1981-02-16 1981-02-16 Manufacture of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2165781A JPS57136385A (en) 1981-02-16 1981-02-16 Manufacture of semiconductor laser

Publications (2)

Publication Number Publication Date
JPS57136385A true JPS57136385A (en) 1982-08-23
JPH0370391B2 JPH0370391B2 (enrdf_load_stackoverflow) 1991-11-07

Family

ID=12061112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2165781A Granted JPS57136385A (en) 1981-02-16 1981-02-16 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS57136385A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031287A (ja) * 1983-07-29 1985-02-18 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
EP1835575A1 (de) 2006-03-17 2007-09-19 Humboldt-Universität zu Berlin Halbleiterlaser und Verfahren zu seiner Herstellung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51151090A (en) * 1975-06-20 1976-12-25 Matsushita Electric Ind Co Ltd Semiconductor laser apparatus and its manufacturing method
JPS556830A (en) * 1978-06-29 1980-01-18 Fujitsu Ltd Semiconductor luminous apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51151090A (en) * 1975-06-20 1976-12-25 Matsushita Electric Ind Co Ltd Semiconductor laser apparatus and its manufacturing method
JPS556830A (en) * 1978-06-29 1980-01-18 Fujitsu Ltd Semiconductor luminous apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031287A (ja) * 1983-07-29 1985-02-18 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
EP1835575A1 (de) 2006-03-17 2007-09-19 Humboldt-Universität zu Berlin Halbleiterlaser und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
JPH0370391B2 (enrdf_load_stackoverflow) 1991-11-07

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