JPS57134960A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57134960A JPS57134960A JP56021302A JP2130281A JPS57134960A JP S57134960 A JPS57134960 A JP S57134960A JP 56021302 A JP56021302 A JP 56021302A JP 2130281 A JP2130281 A JP 2130281A JP S57134960 A JPS57134960 A JP S57134960A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor
- conductivity
- constitution
- boundary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56021302A JPS57134960A (en) | 1981-02-16 | 1981-02-16 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56021302A JPS57134960A (en) | 1981-02-16 | 1981-02-16 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57134960A true JPS57134960A (en) | 1982-08-20 |
| JPS6349911B2 JPS6349911B2 (enrdf_load_stackoverflow) | 1988-10-06 |
Family
ID=12051344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56021302A Granted JPS57134960A (en) | 1981-02-16 | 1981-02-16 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57134960A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03245568A (ja) * | 1990-02-23 | 1991-11-01 | Sanyo Electric Co Ltd | 固体撮像素子 |
| JPH03250765A (ja) * | 1990-02-28 | 1991-11-08 | Sanyo Electric Co Ltd | 固体撮像素子 |
| WO2011117161A3 (de) * | 2010-03-26 | 2012-02-23 | Iee International Electronics & Engineering S.A. | Lichtsensor mit photoempfindlicher halbleiterstruktur |
-
1981
- 1981-02-16 JP JP56021302A patent/JPS57134960A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03245568A (ja) * | 1990-02-23 | 1991-11-01 | Sanyo Electric Co Ltd | 固体撮像素子 |
| JPH03250765A (ja) * | 1990-02-28 | 1991-11-08 | Sanyo Electric Co Ltd | 固体撮像素子 |
| WO2011117161A3 (de) * | 2010-03-26 | 2012-02-23 | Iee International Electronics & Engineering S.A. | Lichtsensor mit photoempfindlicher halbleiterstruktur |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6349911B2 (enrdf_load_stackoverflow) | 1988-10-06 |
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