JPS6349911B2 - - Google Patents

Info

Publication number
JPS6349911B2
JPS6349911B2 JP56021302A JP2130281A JPS6349911B2 JP S6349911 B2 JPS6349911 B2 JP S6349911B2 JP 56021302 A JP56021302 A JP 56021302A JP 2130281 A JP2130281 A JP 2130281A JP S6349911 B2 JPS6349911 B2 JP S6349911B2
Authority
JP
Japan
Prior art keywords
semiconductor
semiconductor substrate
region
minority carriers
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56021302A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57134960A (en
Inventor
Yoshihito Amamya
Katsumi Murase
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56021302A priority Critical patent/JPS57134960A/ja
Publication of JPS57134960A publication Critical patent/JPS57134960A/ja
Publication of JPS6349911B2 publication Critical patent/JPS6349911B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56021302A 1981-02-16 1981-02-16 Semiconductor device Granted JPS57134960A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56021302A JPS57134960A (en) 1981-02-16 1981-02-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56021302A JPS57134960A (en) 1981-02-16 1981-02-16 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57134960A JPS57134960A (en) 1982-08-20
JPS6349911B2 true JPS6349911B2 (enrdf_load_stackoverflow) 1988-10-06

Family

ID=12051344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56021302A Granted JPS57134960A (en) 1981-02-16 1981-02-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57134960A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03245568A (ja) * 1990-02-23 1991-11-01 Sanyo Electric Co Ltd 固体撮像素子
JPH03250765A (ja) * 1990-02-28 1991-11-08 Sanyo Electric Co Ltd 固体撮像素子
WO2011117161A2 (de) * 2010-03-26 2011-09-29 Iee International Electronics & Engineering S.A. Lichtsensor mit photoempfindlicher halbleiterstruktur

Also Published As

Publication number Publication date
JPS57134960A (en) 1982-08-20

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