JPH0426792B2 - - Google Patents
Info
- Publication number
- JPH0426792B2 JPH0426792B2 JP61237781A JP23778186A JPH0426792B2 JP H0426792 B2 JPH0426792 B2 JP H0426792B2 JP 61237781 A JP61237781 A JP 61237781A JP 23778186 A JP23778186 A JP 23778186A JP H0426792 B2 JPH0426792 B2 JP H0426792B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- junction
- band
- bandgap
- semiconductor region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 31
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 2
- 229910005542 GaSb Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61237781A JPS62188284A (ja) | 1986-10-06 | 1986-10-06 | イソタイプヘテロ接合光・電力変換素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61237781A JPS62188284A (ja) | 1986-10-06 | 1986-10-06 | イソタイプヘテロ接合光・電力変換素子 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3337777A Division JPS53118994A (en) | 1977-03-28 | 1977-03-28 | Iso type hetero junction photo electric conversion element and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62188284A JPS62188284A (ja) | 1987-08-17 |
| JPH0426792B2 true JPH0426792B2 (enrdf_load_stackoverflow) | 1992-05-08 |
Family
ID=17020336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61237781A Granted JPS62188284A (ja) | 1986-10-06 | 1986-10-06 | イソタイプヘテロ接合光・電力変換素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62188284A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7659474B2 (en) * | 2005-05-04 | 2010-02-09 | The Boeing Company | Solar cell array with isotype-heterojunction diode |
-
1986
- 1986-10-06 JP JP61237781A patent/JPS62188284A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62188284A (ja) | 1987-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2264787B1 (en) | High efficiency multi-junction solar cells | |
| US4477721A (en) | Electro-optic signal conversion | |
| CN101803035B (zh) | 基于纳米线的太阳能电池结构 | |
| US5322572A (en) | Monolithic tandem solar cell | |
| JPS6148799B2 (enrdf_load_stackoverflow) | ||
| JPS6359269B2 (enrdf_load_stackoverflow) | ||
| CN101675527A (zh) | 用于高效率串叠型太阳能电池的低电阻隧道结 | |
| US6730538B1 (en) | Fabricating electronic devices using actinide oxide semiconductor materials | |
| Terghini et al. | Performance evaluation and comparison of monolithic and mechanically stacked dual tandem InGaP/GaAs heterojunction on Ge Cell: A TCAD study | |
| JPH0426792B2 (enrdf_load_stackoverflow) | ||
| JP3646953B2 (ja) | 太陽電池 | |
| Perez-Albuerne et al. | Photovoltaic materials | |
| JPH06232436A (ja) | 太陽電池及びその製造方法 | |
| Ojo et al. | Photovoltaic solar cells: Materials, concepts and devices | |
| JPS62296569A (ja) | タンデム構造太陽電池 | |
| JPS6219080B2 (enrdf_load_stackoverflow) | ||
| JPS6249754B2 (enrdf_load_stackoverflow) | ||
| CN112582494B (zh) | 具有恰好四个子电池的单片的多结太阳能电池 | |
| JPH07231108A (ja) | 太陽電池 | |
| JPH07122763A (ja) | 高効率光起電力素子 | |
| JPS633471A (ja) | タンデム構造太陽電池 | |
| JPS63194373A (ja) | 太陽電池 | |
| JP2002368239A (ja) | 熱光発電用光電変換素子 | |
| JPS6145398B2 (enrdf_load_stackoverflow) | ||
| JPH04137768A (ja) | 化合物半導体光電交換装置 |