JPS57134925A - Plasma cvd film producer - Google Patents

Plasma cvd film producer

Info

Publication number
JPS57134925A
JPS57134925A JP2012581A JP2012581A JPS57134925A JP S57134925 A JPS57134925 A JP S57134925A JP 2012581 A JP2012581 A JP 2012581A JP 2012581 A JP2012581 A JP 2012581A JP S57134925 A JPS57134925 A JP S57134925A
Authority
JP
Japan
Prior art keywords
bell jar
deposits
etching
upper electrode
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012581A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6243331B2 (enrdf_load_stackoverflow
Inventor
Junichi Suzuki
Harushige Kurokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Kokusai Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Co Ltd filed Critical Kokusai Electric Co Ltd
Priority to JP2012581A priority Critical patent/JPS57134925A/ja
Publication of JPS57134925A publication Critical patent/JPS57134925A/ja
Publication of JPS6243331B2 publication Critical patent/JPS6243331B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP2012581A 1981-02-16 1981-02-16 Plasma cvd film producer Granted JPS57134925A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012581A JPS57134925A (en) 1981-02-16 1981-02-16 Plasma cvd film producer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012581A JPS57134925A (en) 1981-02-16 1981-02-16 Plasma cvd film producer

Publications (2)

Publication Number Publication Date
JPS57134925A true JPS57134925A (en) 1982-08-20
JPS6243331B2 JPS6243331B2 (enrdf_load_stackoverflow) 1987-09-12

Family

ID=12018394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012581A Granted JPS57134925A (en) 1981-02-16 1981-02-16 Plasma cvd film producer

Country Status (1)

Country Link
JP (1) JPS57134925A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6348832A (ja) * 1986-08-19 1988-03-01 Tokyo Electron Ltd Ｃｖｄ装置
JPS63129630A (ja) * 1986-11-20 1988-06-02 Fuji Electric Co Ltd プラズマｃｖｄ薄膜形成法
JPH01102921A (ja) * 1987-10-16 1989-04-20 Semiconductor Energy Lab Co Ltd 被膜作製方法
JPH01115235U (enrdf_load_stackoverflow) * 1988-01-29 1989-08-03

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6348832A (ja) * 1986-08-19 1988-03-01 Tokyo Electron Ltd Ｃｖｄ装置
JPS63129630A (ja) * 1986-11-20 1988-06-02 Fuji Electric Co Ltd プラズマｃｖｄ薄膜形成法
JPH01102921A (ja) * 1987-10-16 1989-04-20 Semiconductor Energy Lab Co Ltd 被膜作製方法
JPH01115235U (enrdf_load_stackoverflow) * 1988-01-29 1989-08-03

Also Published As

Publication number Publication date
JPS6243331B2 (enrdf_load_stackoverflow) 1987-09-12

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