JPS57132358A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57132358A
JPS57132358A JP56017713A JP1771381A JPS57132358A JP S57132358 A JPS57132358 A JP S57132358A JP 56017713 A JP56017713 A JP 56017713A JP 1771381 A JP1771381 A JP 1771381A JP S57132358 A JPS57132358 A JP S57132358A
Authority
JP
Japan
Prior art keywords
type
diffusion
oxygen gas
emitter region
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56017713A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0241168B2 (enExample
Inventor
Kenichiro Kaneko
Mitsuhiko Kanbayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56017713A priority Critical patent/JPS57132358A/ja
Publication of JPS57132358A publication Critical patent/JPS57132358A/ja
Publication of JPH0241168B2 publication Critical patent/JPH0241168B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP56017713A 1981-02-09 1981-02-09 Manufacture of semiconductor device Granted JPS57132358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56017713A JPS57132358A (en) 1981-02-09 1981-02-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56017713A JPS57132358A (en) 1981-02-09 1981-02-09 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57132358A true JPS57132358A (en) 1982-08-16
JPH0241168B2 JPH0241168B2 (enExample) 1990-09-14

Family

ID=11951388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56017713A Granted JPS57132358A (en) 1981-02-09 1981-02-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57132358A (enExample)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5110070A (ja) * 1974-07-13 1976-01-27 Shizuoka Seiki Co Ltd Junkangatakokumotsukansoki
JPS55102266A (en) * 1979-01-31 1980-08-05 Fujitsu Ltd Fabricating method of semiconductor device
JPS55125625A (en) * 1979-03-23 1980-09-27 Nec Corp Diffusion of impurity

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5110070A (ja) * 1974-07-13 1976-01-27 Shizuoka Seiki Co Ltd Junkangatakokumotsukansoki
JPS55102266A (en) * 1979-01-31 1980-08-05 Fujitsu Ltd Fabricating method of semiconductor device
JPS55125625A (en) * 1979-03-23 1980-09-27 Nec Corp Diffusion of impurity

Also Published As

Publication number Publication date
JPH0241168B2 (enExample) 1990-09-14

Similar Documents

Publication Publication Date Title
GB809644A (en) Improvements in or relating to the manufacture of semi-conductor bodies
GB1264879A (enExample)
JPS5541704A (en) Production of semiconductor device
JPS559425A (en) Manufacturing method for semiconductor device
EP0305977A3 (en) Method for doping a semiconductor integrated circuit
JPS5655038A (en) Diffusing method for impurity into semiconductor wafer
JPS5346272A (en) Impurity diffusion method
JPS6417425A (en) Manufacture of semiconductor device
JPS57199251A (en) Semiconductor device
JPS5544701A (en) Manufacturing transistor
JPS52154344A (en) Impurity diffusion method
JPS5279871A (en) Production of impurity diffused layer
JPS6484670A (en) Manufacture of mosfet
JPS5732647A (en) Manufacture of semiconductor device
JPS54142974A (en) Diffusing method for aluminum
JPS5230379A (en) Process of semiconductor device
JPS54101663A (en) Aluminum diffusion method
JPS55156327A (en) Manufacture for semiconductor
JPS5493967A (en) Production of gallium arsenide semiconductor device
JPS57149769A (en) Manufacture of reverse direction operation npn transistor
JPS5693315A (en) Manufacture of semiconductor device
JPS57112071A (en) Semiconductor device
JPS5275268A (en) Method of diffusing impurity into semiconductor
JPS5680129A (en) Manufacture of semiconductor device
JPS5759317A (en) Manufacture of semiconductor device