JPH0241168B2 - - Google Patents

Info

Publication number
JPH0241168B2
JPH0241168B2 JP56017713A JP1771381A JPH0241168B2 JP H0241168 B2 JPH0241168 B2 JP H0241168B2 JP 56017713 A JP56017713 A JP 56017713A JP 1771381 A JP1771381 A JP 1771381A JP H0241168 B2 JPH0241168 B2 JP H0241168B2
Authority
JP
Japan
Prior art keywords
substrate
emitter region
diffusion
gold
mixed gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56017713A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57132358A (en
Inventor
Kenichiro Kaneko
Mitsuhiko Kanbayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56017713A priority Critical patent/JPS57132358A/ja
Publication of JPS57132358A publication Critical patent/JPS57132358A/ja
Publication of JPH0241168B2 publication Critical patent/JPH0241168B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP56017713A 1981-02-09 1981-02-09 Manufacture of semiconductor device Granted JPS57132358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56017713A JPS57132358A (en) 1981-02-09 1981-02-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56017713A JPS57132358A (en) 1981-02-09 1981-02-09 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57132358A JPS57132358A (en) 1982-08-16
JPH0241168B2 true JPH0241168B2 (enExample) 1990-09-14

Family

ID=11951388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56017713A Granted JPS57132358A (en) 1981-02-09 1981-02-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57132358A (enExample)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5110070A (ja) * 1974-07-13 1976-01-27 Shizuoka Seiki Co Ltd Junkangatakokumotsukansoki
JPS55102266A (en) * 1979-01-31 1980-08-05 Fujitsu Ltd Fabricating method of semiconductor device
JPS55125625A (en) * 1979-03-23 1980-09-27 Nec Corp Diffusion of impurity

Also Published As

Publication number Publication date
JPS57132358A (en) 1982-08-16

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