JPS57130472A - Field-effect transistor - Google Patents

Field-effect transistor

Info

Publication number
JPS57130472A
JPS57130472A JP56016615A JP1661581A JPS57130472A JP S57130472 A JPS57130472 A JP S57130472A JP 56016615 A JP56016615 A JP 56016615A JP 1661581 A JP1661581 A JP 1661581A JP S57130472 A JPS57130472 A JP S57130472A
Authority
JP
Japan
Prior art keywords
layer
substrate
exogeneous
vgs
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56016615A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0147904B2 (enrdf_load_stackoverflow
Inventor
Yasuhisa Omura
Kuniki Owada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56016615A priority Critical patent/JPS57130472A/ja
Publication of JPS57130472A publication Critical patent/JPS57130472A/ja
Publication of JPH0147904B2 publication Critical patent/JPH0147904B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP56016615A 1981-02-06 1981-02-06 Field-effect transistor Granted JPS57130472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56016615A JPS57130472A (en) 1981-02-06 1981-02-06 Field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56016615A JPS57130472A (en) 1981-02-06 1981-02-06 Field-effect transistor

Publications (2)

Publication Number Publication Date
JPS57130472A true JPS57130472A (en) 1982-08-12
JPH0147904B2 JPH0147904B2 (enrdf_load_stackoverflow) 1989-10-17

Family

ID=11921227

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56016615A Granted JPS57130472A (en) 1981-02-06 1981-02-06 Field-effect transistor

Country Status (1)

Country Link
JP (1) JPS57130472A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027177A (en) * 1989-07-24 1991-06-25 Hughes Aircraft Company Floating base lateral bipolar phototransistor with field effect gate voltage control
EP0534131A3 (en) * 1991-09-27 1993-10-06 Siemens Aktiengesellschaft Mos technique in soi technique

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027177A (en) * 1989-07-24 1991-06-25 Hughes Aircraft Company Floating base lateral bipolar phototransistor with field effect gate voltage control
EP0534131A3 (en) * 1991-09-27 1993-10-06 Siemens Aktiengesellschaft Mos technique in soi technique

Also Published As

Publication number Publication date
JPH0147904B2 (enrdf_load_stackoverflow) 1989-10-17

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