JPH0147904B2 - - Google Patents
Info
- Publication number
- JPH0147904B2 JPH0147904B2 JP56016615A JP1661581A JPH0147904B2 JP H0147904 B2 JPH0147904 B2 JP H0147904B2 JP 56016615 A JP56016615 A JP 56016615A JP 1661581 A JP1661581 A JP 1661581A JP H0147904 B2 JPH0147904 B2 JP H0147904B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- drain
- region
- source
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56016615A JPS57130472A (en) | 1981-02-06 | 1981-02-06 | Field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56016615A JPS57130472A (en) | 1981-02-06 | 1981-02-06 | Field-effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57130472A JPS57130472A (en) | 1982-08-12 |
| JPH0147904B2 true JPH0147904B2 (enrdf_load_stackoverflow) | 1989-10-17 |
Family
ID=11921227
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56016615A Granted JPS57130472A (en) | 1981-02-06 | 1981-02-06 | Field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57130472A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5027177A (en) * | 1989-07-24 | 1991-06-25 | Hughes Aircraft Company | Floating base lateral bipolar phototransistor with field effect gate voltage control |
| EP0534131A3 (en) * | 1991-09-27 | 1993-10-06 | Siemens Aktiengesellschaft | Mos technique in soi technique |
-
1981
- 1981-02-06 JP JP56016615A patent/JPS57130472A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57130472A (en) | 1982-08-12 |
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