JPS57128060A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57128060A
JPS57128060A JP56187286A JP18728681A JPS57128060A JP S57128060 A JPS57128060 A JP S57128060A JP 56187286 A JP56187286 A JP 56187286A JP 18728681 A JP18728681 A JP 18728681A JP S57128060 A JPS57128060 A JP S57128060A
Authority
JP
Japan
Prior art keywords
integrational
drain
density
source
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56187286A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6132824B2 (enrdf_load_stackoverflow
Inventor
Koichi Nagasawa
Kouji Harada
Masahiko Denda
Haruhiko Abe
Yoshio Kono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56187286A priority Critical patent/JPS57128060A/ja
Publication of JPS57128060A publication Critical patent/JPS57128060A/ja
Publication of JPS6132824B2 publication Critical patent/JPS6132824B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)
JP56187286A 1981-11-19 1981-11-19 Semiconductor device Granted JPS57128060A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56187286A JPS57128060A (en) 1981-11-19 1981-11-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56187286A JPS57128060A (en) 1981-11-19 1981-11-19 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP55145481A Division JPS5834946B2 (ja) 1980-10-16 1980-10-16 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS57128060A true JPS57128060A (en) 1982-08-09
JPS6132824B2 JPS6132824B2 (enrdf_load_stackoverflow) 1986-07-29

Family

ID=16203335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56187286A Granted JPS57128060A (en) 1981-11-19 1981-11-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57128060A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4924279A (en) * 1983-05-12 1990-05-08 Seiko Instruments Inc. Thin film transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4924279A (en) * 1983-05-12 1990-05-08 Seiko Instruments Inc. Thin film transistor

Also Published As

Publication number Publication date
JPS6132824B2 (enrdf_load_stackoverflow) 1986-07-29

Similar Documents

Publication Publication Date Title
GB1357515A (en) Method for manufacturing an mos integrated circuit
ES8800789A1 (es) Perfeccionamientos en un dispositivo transistor mos
JPS5633881A (en) Manufacture of semiconductor device
JPS57128060A (en) Semiconductor device
JPS54101680A (en) Semiconductor device
JPS56126973A (en) Mos field effect transistor
JPS5731177A (en) Insulated gate type field effect transistor
JPS57201080A (en) Semiconductor device
JPS6437058A (en) Insulated-gate field-effect transistor
JPS572579A (en) Manufacture of junction type field effect transistor
JPS5752150A (en) Semiconductor device with element forming region surrounded by porous silicon oxide
JPS57121280A (en) Field effect transistor
JPS57128966A (en) Mis type semiconductor device
JPS56126970A (en) Mos field effect transistor and manufacture thereof
JPS6437059A (en) Manufacture of semiconductor device
JPS56115570A (en) Manufacture of semiconductor device
JPS56142674A (en) Semiconductor memory device
JPS5432981A (en) Manufacture of longitudinal mos field effect transistor
JPS57199268A (en) Junction type field effect transistor
JPS52100878A (en) Field effect transistor
JPS6461953A (en) Mos transistor
JPS52136583A (en) Mos type semiconductor device
JPS5376770A (en) Production of insulated gate field effect transistor
JPS52123179A (en) Mos type semiconductor device and its production
JPS5586163A (en) Mis semiconductor device