JPS57126677A - Electrode - Google Patents

Electrode

Info

Publication number
JPS57126677A
JPS57126677A JP56012064A JP1206481A JPS57126677A JP S57126677 A JPS57126677 A JP S57126677A JP 56012064 A JP56012064 A JP 56012064A JP 1206481 A JP1206481 A JP 1206481A JP S57126677 A JPS57126677 A JP S57126677A
Authority
JP
Japan
Prior art keywords
layer
spattering
evaporation
instance
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56012064A
Other languages
Japanese (ja)
Inventor
Yoshihide Niifuku
Seiki Konno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP56012064A priority Critical patent/JPS57126677A/en
Publication of JPS57126677A publication Critical patent/JPS57126677A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00Electric solid-state thin-film or thick-film devices, not otherwise provided for

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Facsimile Heads (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To obtain a novel electrode fitted for a head for thermal facsimile by forming the same of a Cu layer and an Al-Cu complex layer and by reducing contact resistance to a heating resistor having large contact resistance to Al, as much as possible, to make thereby the contact excellent. CONSTITUTION:A glazed layer 2, for instance, is formed on the surface of a substrate 1 and thereon the heating resistor 3 of the thin film of alloy such as TaSi, TaN and Mosi is formed by spattering, evaporation or the like. Next, the Cu layer 11 forming a foundation in contact with the resistor 3 and the glazed layer 2 is formed by spattering, evaporation or the like. And further thereon the Al-Cu complex layer 12 containing Cu of 4-5%, for instance, is formed and made to constitute the electrode 13 by pattering. On ths surface thereof a protection film 5 is formed, preferably, of SiO2, Al2O3 or the like.
JP56012064A 1981-01-29 1981-01-29 Electrode Pending JPS57126677A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56012064A JPS57126677A (en) 1981-01-29 1981-01-29 Electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56012064A JPS57126677A (en) 1981-01-29 1981-01-29 Electrode

Publications (1)

Publication Number Publication Date
JPS57126677A true JPS57126677A (en) 1982-08-06

Family

ID=11795167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56012064A Pending JPS57126677A (en) 1981-01-29 1981-01-29 Electrode

Country Status (1)

Country Link
JP (1) JPS57126677A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6430769A (en) * 1987-07-28 1989-02-01 Toshiba Corp Thermal head

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6430769A (en) * 1987-07-28 1989-02-01 Toshiba Corp Thermal head

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