JPS57124463A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57124463A
JPS57124463A JP56009992A JP999281A JPS57124463A JP S57124463 A JPS57124463 A JP S57124463A JP 56009992 A JP56009992 A JP 56009992A JP 999281 A JP999281 A JP 999281A JP S57124463 A JPS57124463 A JP S57124463A
Authority
JP
Japan
Prior art keywords
circuit
cell
function
computer function
randum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56009992A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6262471B2 (enExample
Inventor
Fumitaka Chiba
Kyozo Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56009992A priority Critical patent/JPS57124463A/ja
Publication of JPS57124463A publication Critical patent/JPS57124463A/ja
Priority to US06/644,664 priority patent/US4525809A/en
Publication of JPS6262471B2 publication Critical patent/JPS6262471B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90Masterslice integrated circuits
    • H10D84/903Masterslice integrated circuits comprising field effect technology
    • H10D84/907CMOS gate arrays
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F15/00Digital computers in general; Data processing equipment in general
    • G06F15/76Architectures of general purpose stored program computers
    • G06F15/78Architectures of general purpose stored program computers comprising a single central processing unit
    • G06F15/7867Architectures of general purpose stored program computers comprising a single central processing unit with reconfigurable architecture
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/02Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/06Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/1733Controllable logic circuits
    • H03K19/1735Controllable logic circuits by wiring, e.g. uncommitted logic arrays
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356104Bistable circuits using complementary field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP56009992A 1981-01-26 1981-01-26 Semiconductor device Granted JPS57124463A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56009992A JPS57124463A (en) 1981-01-26 1981-01-26 Semiconductor device
US06/644,664 US4525809A (en) 1981-01-26 1984-08-27 Integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56009992A JPS57124463A (en) 1981-01-26 1981-01-26 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57124463A true JPS57124463A (en) 1982-08-03
JPS6262471B2 JPS6262471B2 (enExample) 1987-12-26

Family

ID=11735351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56009992A Granted JPS57124463A (en) 1981-01-26 1981-01-26 Semiconductor device

Country Status (2)

Country Link
US (1) US4525809A (enExample)
JP (1) JPS57124463A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61123154A (ja) * 1984-11-20 1986-06-11 Fujitsu Ltd ゲ−トアレイlsi装置
JPS61258465A (ja) * 1985-05-13 1986-11-15 Seiko Epson Corp ワンチツプ・マイクロ・コンピユ−タ
JPS61267356A (ja) * 1985-05-22 1986-11-26 Nippon Denso Co Ltd 半導体装置
JPH08278955A (ja) * 1995-03-31 1996-10-22 Seiko Epson Corp 半導体装置

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0170052B1 (en) * 1984-07-02 1992-04-01 Fujitsu Limited Master slice type semiconductor circuit device
JPH0652784B2 (ja) * 1984-12-07 1994-07-06 富士通株式会社 ゲートアレイ集積回路装置及びその製造方法
FR2595870B1 (fr) * 1986-03-12 1988-10-14 Efcis Circuit integre avec macrocellules noyees dans une mer de portes de type prediffusees et procede de fabrication
JPH079941B2 (ja) * 1986-04-09 1995-02-01 日本電気株式会社 集積回路装置の設計方法
US5243208A (en) * 1987-05-27 1993-09-07 Hitachi, Ltd. Semiconductor integrated circuit device having a gate array with a ram and by-pass signal lines which interconnect a logic section and I/O unit circuit of the gate array
JPH07114259B2 (ja) * 1989-10-19 1995-12-06 株式会社東芝 半導体記憶装置
DE69131679T2 (de) * 1990-07-30 2000-05-11 Texas Instruments Inc., Dallas Statisches Speicherfeld mit wahlfreiem Zugriff, welches mindestens eine arithmetisch-logische Einheit enthält
JP2894635B2 (ja) * 1990-11-30 1999-05-24 株式会社東芝 半導体記憶装置
US5349552A (en) * 1991-12-20 1994-09-20 Vlsi Technology, Inc. Memory compiler with multiple selectable core elements
WO1995004402A1 (en) * 1993-08-03 1995-02-09 Xilinx, Inc. Microprocessor-based fpga
US6675361B1 (en) 1993-12-27 2004-01-06 Hyundai Electronics America Method of constructing an integrated circuit comprising an embedded macro
US5671397A (en) * 1993-12-27 1997-09-23 At&T Global Information Solutions Company Sea-of-cells array of transistors
JP5110247B2 (ja) * 2006-07-31 2012-12-26 ミツミ電機株式会社 半導体集積回路装置
JP2008033724A (ja) * 2006-07-31 2008-02-14 Mitsumi Electric Co Ltd シングル・チップ半導体集積回路装置の製造方法、プログラムデバッグ方法、マイクロコントローラの製造方法
JP5080762B2 (ja) * 2006-07-31 2012-11-21 ミツミ電機株式会社 半導体集積回路装置
US9985040B2 (en) 2016-01-14 2018-05-29 Micron Technology, Inc. Integrated circuitry and 3D memory

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342578A (en) * 1976-09-27 1978-04-18 Siemens Ag Semiconductor chip for producing lsi
JPS5578561A (en) * 1978-12-08 1980-06-13 Fujitsu Ltd Master-slice lsi circuit device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3643232A (en) * 1967-06-05 1972-02-15 Texas Instruments Inc Large-scale integration of electronic systems in microminiature form
US3365707A (en) * 1967-06-23 1968-01-23 Rca Corp Lsi array and standard cells
US3839846A (en) * 1972-05-03 1974-10-08 Teller Environmental Systems Process and apparatus for treatment of jet engine exhaust
US3936812A (en) * 1974-12-30 1976-02-03 Ibm Corporation Segmented parallel rail paths for input/output signals
JPS5472691A (en) * 1977-11-21 1979-06-11 Toshiba Corp Semiconductor device
US4402044A (en) * 1980-11-24 1983-08-30 Texas Instruments Incorporated Microprocessor with strip layout of busses, ALU and registers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342578A (en) * 1976-09-27 1978-04-18 Siemens Ag Semiconductor chip for producing lsi
JPS5578561A (en) * 1978-12-08 1980-06-13 Fujitsu Ltd Master-slice lsi circuit device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61123154A (ja) * 1984-11-20 1986-06-11 Fujitsu Ltd ゲ−トアレイlsi装置
JPS61258465A (ja) * 1985-05-13 1986-11-15 Seiko Epson Corp ワンチツプ・マイクロ・コンピユ−タ
JPS61267356A (ja) * 1985-05-22 1986-11-26 Nippon Denso Co Ltd 半導体装置
JPH08278955A (ja) * 1995-03-31 1996-10-22 Seiko Epson Corp 半導体装置

Also Published As

Publication number Publication date
JPS6262471B2 (enExample) 1987-12-26
US4525809A (en) 1985-06-25

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