JPS57124427A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57124427A JPS57124427A JP910281A JP910281A JPS57124427A JP S57124427 A JPS57124427 A JP S57124427A JP 910281 A JP910281 A JP 910281A JP 910281 A JP910281 A JP 910281A JP S57124427 A JPS57124427 A JP S57124427A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- diffusion
- high density
- region
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP910281A JPS57124427A (en) | 1981-01-26 | 1981-01-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP910281A JPS57124427A (en) | 1981-01-26 | 1981-01-26 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57124427A true JPS57124427A (en) | 1982-08-03 |
Family
ID=11711257
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP910281A Pending JPS57124427A (en) | 1981-01-26 | 1981-01-26 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57124427A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0263504A2 (en) * | 1986-10-07 | 1988-04-13 | Kabushiki Kaisha Toshiba | Method for manufacturing high-breakdown voltage semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5011230A (ja) * | 1973-05-31 | 1975-02-05 |
-
1981
- 1981-01-26 JP JP910281A patent/JPS57124427A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5011230A (ja) * | 1973-05-31 | 1975-02-05 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0263504A2 (en) * | 1986-10-07 | 1988-04-13 | Kabushiki Kaisha Toshiba | Method for manufacturing high-breakdown voltage semiconductor device |
US4780426A (en) * | 1986-10-07 | 1988-10-25 | Kabushiki Kaisha Toshiba | Method for manufacturing high-breakdown voltage semiconductor device |
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