JPS57114292A - Thin film image pickup element - Google Patents

Thin film image pickup element

Info

Publication number
JPS57114292A
JPS57114292A JP56000162A JP16281A JPS57114292A JP S57114292 A JPS57114292 A JP S57114292A JP 56000162 A JP56000162 A JP 56000162A JP 16281 A JP16281 A JP 16281A JP S57114292 A JPS57114292 A JP S57114292A
Authority
JP
Japan
Prior art keywords
electrode
layer
covering
thin film
pickup element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56000162A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6258550B2 (enrdf_load_stackoverflow
Inventor
Toshihisa Hamano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP56000162A priority Critical patent/JPS57114292A/ja
Priority to US06/336,991 priority patent/US4471371A/en
Publication of JPS57114292A publication Critical patent/JPS57114292A/ja
Priority to US06/582,642 priority patent/US4517733A/en
Publication of JPS6258550B2 publication Critical patent/JPS6258550B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H04N1/02805—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a two-dimensional array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
JP56000162A 1981-01-06 1981-01-06 Thin film image pickup element Granted JPS57114292A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56000162A JPS57114292A (en) 1981-01-06 1981-01-06 Thin film image pickup element
US06/336,991 US4471371A (en) 1981-01-06 1982-01-04 Thin film image pickup element
US06/582,642 US4517733A (en) 1981-01-06 1984-02-22 Process for fabricating thin film image pick-up element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56000162A JPS57114292A (en) 1981-01-06 1981-01-06 Thin film image pickup element

Publications (2)

Publication Number Publication Date
JPS57114292A true JPS57114292A (en) 1982-07-16
JPS6258550B2 JPS6258550B2 (enrdf_load_stackoverflow) 1987-12-07

Family

ID=11466338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56000162A Granted JPS57114292A (en) 1981-01-06 1981-01-06 Thin film image pickup element

Country Status (1)

Country Link
JP (1) JPS57114292A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59126666A (ja) * 1983-01-10 1984-07-21 Seiko Epson Corp 固体イメ−ジセンサ
JPS59185474A (ja) * 1983-04-04 1984-10-22 Seiko Epson Corp 固体イメ−ジセンサ
JPS59188168A (ja) * 1983-04-08 1984-10-25 Seiko Epson Corp 光電変換装置
US4823178A (en) * 1984-09-29 1989-04-18 Kabushiki Kaisha Toshiba Photosensor suited for image sensor
JPH0620568U (ja) * 1992-02-29 1994-03-18 株式会社ノーリツ 排水トラップ用のエクステンション装置
JP2001291854A (ja) * 2000-04-07 2001-10-19 Matsushita Electric Ind Co Ltd ２次元ｘ線センサおよびその製造方法
JP2011139069A (ja) * 2009-12-30 2011-07-14 Commissariat A L'energie Atomique & Aux Energies Alternatives 集積ダイアモンド変換画素化撮像装置及びその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59126666A (ja) * 1983-01-10 1984-07-21 Seiko Epson Corp 固体イメ−ジセンサ
JPS59185474A (ja) * 1983-04-04 1984-10-22 Seiko Epson Corp 固体イメ−ジセンサ
JPS59188168A (ja) * 1983-04-08 1984-10-25 Seiko Epson Corp 光電変換装置
US4823178A (en) * 1984-09-29 1989-04-18 Kabushiki Kaisha Toshiba Photosensor suited for image sensor
JPH0620568U (ja) * 1992-02-29 1994-03-18 株式会社ノーリツ 排水トラップ用のエクステンション装置
JP2001291854A (ja) * 2000-04-07 2001-10-19 Matsushita Electric Ind Co Ltd ２次元ｘ線センサおよびその製造方法
JP2011139069A (ja) * 2009-12-30 2011-07-14 Commissariat A L'energie Atomique & Aux Energies Alternatives 集積ダイアモンド変換画素化撮像装置及びその製造方法
JP2017120266A (ja) * 2009-12-30 2017-07-06 コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ 集積ダイアモンド変換画素化撮像装置及びその製造方法

Also Published As

Publication number Publication date
JPS6258550B2 (enrdf_load_stackoverflow) 1987-12-07

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